We present a formal proof of a time-triggered hardware interface. The design implements the bit-clock synchronization mechanism specified by the FlexRay standard for automotive embedded systems. The design is described at the gate-level. It can be translated to Verilog and synthesized on FPGA. The proof is based on a general model of asynchronous communications and combines interactive theorem ...

A first-principles approach is presented for the thermoelectricity in molecular junctions formed by a single molecule contact. The study investigates the Seebeck coefficient considering the source-drain electrodes with distinct temperatures and chemical potentials in a three-terminal geometry junction. We compare the Seebeck coefficient in the amino-substituted and unsubstituted butanethiol jun...

We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with approximately 2 mueV linewidth. The splitting into two linearly polarized components arises through an exchange interaction within the exciton. The exchange int...

Abstract We formalize the correctness of a real-time scheduler in a time-triggered architecture. Where previous research elaborated on real-time protocol correctness, we extend this work to gate-level hardware. This requires a sophisticated analysis of analog bit-level synchronization and message transmission. Our case-study is a concrete automotive bus controller (ABC). For a set of interconne...

We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric devices. A large and frequency-independent gm approximately 20 microS is observed on short devices, which meets the best dc results. The capacitance per unit gate ...

Conventional techniques to extract channel mobility, , and sheet carrier concentration, nS , in heterostructure fieldeffect transistors (HFET’s) do not account for the distributed nature of the device. This can result in substantial errors. To address this, we have developed a new technique that consists of measuring the gate-to-source impedance with the drain floating (Z11) over a broad freque...

In this paper a novel low power double edge pulse triggered flip flop (FF) design is present. First, the pulse generation control logic by using the NAND function and is removed from the critical path to facilitate a faster discharge operation. A simple two transistor NAND gate design is used to reduce the circuit complexity. Second, a double edge conditional discharging flip flop is used to re...

We evaluate the RC-time of edge states capacitively coupled to a gate located away from a QPC which allows for partial transmission of an edge channel. At long times or low frequencies the RC-time governs the relaxation of charge and current and governs the fluctuations of the equilibrium electrostatic potential. The RC-time in mesoscopic structures is determined by an electrochemical capacitan...

Gate-controllable transmission of terahertz (THz) radiation makes graphene a promising material for making high-speed THz wave modulators. However, to date, graphene-based THz modulators have exhibited only small on/off ratios due to small THz absorption in single-layer graphene. Here we demonstrate a ∼50% amplitude modulation of THz waves with gated single-layer graphene by the use of extraord...

We use a superconducting microresonator as cavity to sense absorption of microwaves by quantum point contact defined surface gates over proximitized two-dimensional electron gas. Renormalization the frequency with phase difference across is consistent coupling Andreev bound states. Near \ensuremath{\pi} difference, we observe random fluctuations in gate voltage, related interference-induced mod...