Intense coherent laser radiation red-detuned from absorption edge can reactively activate sizable Hall-type charge and spin transport in n-doped paramagnetic semiconductors as a consequence of k-space Berry curvature transferred from the valence band to the photon-dressed conduction band. In the presence of disorder, the optically induced Hall conductance can change sign with laser intensity.

Cu2ZnSnS4 nanoparticles with sizes of 2-5 nm, synthesized in hot organic solutions, exhibited size-dependent photoelectrochemical properties due to the quantum size effect. The potentials of the valence band edge and conduction band edge of the nanoparticles, experimentally determined by photoelectrochemical measurements, were shifted more positively and more negatively, respectively, with a de...

Articles you may be interested in Polarization dependent photocurrent spectroscopy of single wurtzite GaAs/AlGaAs core-shell nanowires Appl. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Appl. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited...

The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a...

We report the observation of resonant tunneling effects a t high applied fields in a multiple quantum-well P-I-N diode. The A10,81no,5,As/Gao,4,1no,53As structure shows features in the dark current due to Zener tunneling of electrons from the lowest sub-band in a valence-band quantum well to the first and second sub-bands of an adjacent conduction-band well.

We calculate the spectrum of three-photon absorption (3PA) in zinc blende semiconductors using Kane's four-band model. We apply this to ZnSe and measure the 3PA spectrum using femtosecond pulses, obtaining excellent agreement. The spectrum shows the apparent onset of 3PA from the split-off band and also shows quantum interference between the several possible evolution pathways when exciting car...

Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT ...

The k·p method is known to be very efficient to accurately describe either the conduction band or the valence band or even both of them in the vicinity of a given point of the Brillouin zone. Recently multiband k·p Hamiltonians including up to 30 bands (and above), which allow us to calculate the band diagram of bulk materials for Td or Oh group semiconductors, have been proposed [1]. The strai...

Boron arsenide, the typically-ignored member of the III–V arsenide series BAs–AlAs–GaAs– InAs is found to resemble silicon electronically: its Γ conduction band minimum is p-like (Γ15), not s-like (Γ1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked...

We examine band-structure engineering in extremely tetragonal ferroelectric perovskites (ABO3) to make these materials suitable for photovoltaic applications. Using first-principles calculations, we study how B-site ordering, lattice strain, cation identity, and oxygen octahedral cage tilts affect the energies and the compositions of the valence and conduction bands. We find that extreme tetrag...