Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

Spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) with birefringence-induced polarization oscillations have been proposed to generate desired photonic microwave signals. Here, we numerically investigate the generation of signals in an optically pumped quantum dot (QD) spin-VCSEL. First, influence intrinsic key parameters on period-one (P1) and properties is discussed. Second,...

This paper demonstrates why VCSEL-based transmitter systems are not able to capitalize on higher-order PAM modulation formats (such as PAM-4) push the link data rate towards 100 Gbit/s with BER of better than 10−5. First, non-linear and biasing-dependent VCSEL behavior is analyzed in great detail prove state-of-the-art VCSELs linear equalization reach these bandwidth targets. Consequently, base...

Abstract The paper aims to analyse a fiber optic link by using optics (FT1000EMT, FT800UMT, FT200UMT, FT1500UMT), transmitters (M9-A64-0300, VCSEL-1060-SM, TUVE-1060-T-TO) and receivers (SRP00294, LDPF XXXX), Octave.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

We present a novel air-bridge subwavelength grating reflector with very high reflectivity to be used as a top mirror in a VCSEL structure. We explain the design method, model the structure using both RCWA and FDTD, and predict the characteristics of a Fabry-Perot structure built with this reflector. We describe the fabrication of the suspended grating.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.