Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on performance GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket surface does not degrade robustness deposited dielectric layer; ...

Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is...

The process of etching is the most crucial part of the work of manufacturing printed circuit boards (PCB). In the etching process by nitric acid, a spent etching waste solution of composition 250 g/L HNO3, 30-40 g/L Cu, 30-40 g/L Sn, 30-40 g/L Pb and 20-25 g/L Fe is produced. High metal concentrations in the spent etching waste solution make it a viable candidate for the recovery of metals. Rec...

OBJECTIVES The aim of this study was to evaluate the effect of pre-etching on the bond strength of silorane-based composite specific adhesive system to dentin. MATERIALS AND METHODS Thirty human molars were randomly divided into 5 groups according to the different bonding strategies. For teeth restored with silorane-based composite (Filtek Silorane, 3M ESPE), the specific self-etching adhesiv...

This work characterized the Cl2/HBr ion-enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of a real commercial etcher was constructed and utilized to simulate accurately a hi...

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching ...

This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of S...

Molecular dynamics (MD) simulations have been used to study surface reaction dynamics of Si and Si02 etching by halogens. To perform classical MD simulations for Si02 etching reaction by halogens (C1 or F), we have constructed new sets of twoand three-body interatomic potential functions based on potential energy data obtained from ab initio quantum mechanical calculations of the electronic sta...

objectives: this study aimed to evaluate the effect of chlorhexidine (chx) application protocol on durability of marginal seal of class v composite restorations. materials and methods: class v cavities (4×2×1.5mm) were prepared in the buccal surfaces of 160 human third molars. the teeth were randomly divided into five groups (n=32) of (g1) chx+rinse+etching, (g2) chx+etching, (g3) etching+chx+r...

Recent progress of wet etching of Z-cut LN, of inductively coupled plasma (ICP-) etching of X-cut LN, and of ICP-etching of proton-exchanged X-cut LN is reported to fabricate low loss ridge guides, micromechanical, and photonic crystal structures. Introduction The development of lithium niobate (LiNbO3, LN) integrated optical devices requires etching techniques for a reliable fabrication of dee...