We have examined the influence of Ga surface saturation on gallium nitride (GaN) nanowire (NW) polytype selection during molecular-beam epitaxy. The in absence and presence nitrogen determines GaN morphology (i.e., films vs NW) selection, respectively. discuss interplay between step-edge diffusion barriers governing NW-to-film-transition SixNy interlayer formation zinc blende (ZB) wurtzite (WZ)...

CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 ◦C in situ annealing. CdZnO thin films evolve from purewurtzite (wz) structure, tomixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was perform...

This paper presents a novel Distributed Video Coding (DVC) scheme in which the decoder is able to generate side information (SI) with high prediction quality for Wyner-Ziv (WZ) frame decoding. In the proposed method, at encoder, each WZ frame is split into two parts based on checkerboard pattern and then separately coded. At decoder, one part of the WZ frame will be firstly reconstructed, and t...

In some distributed video coding (DVC) systems, the total bitrate depends mainly on the key frames (Intra coded) quality and on the side information accuracy. In this paper, a rate control (RC) mechanism is proposed to achieve and maintain a certain target bitrate for the overall Intra and WZ bitstream, mainly by adjusting online the Intra frames quality through the quantization parameter (QP)....

III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performanc...

Here, direct correlation between the microstructure of InAs nanowires (NWs) and their electronic transport behavior at room temperature is reported. Pure zinc blende (ZB) InAs NWs grown on SiO2/Si substrates are characterized by a rotational twin along their growth-direction axis while wurtzite (WZ) InAs NWs grown on InAs (111)B substrates have numerous stacking faults perpendicular to their gr...

The epitaxial growth of antimonide-based nanowires has become an attractive subject due to their interesting properties required for various applications such as long-wavelength IR detectors. The studies conducted on antimonide-based nanowires indicate that they preferentially crystallize in the zinc blende (ZB) crystal structure rather than wurtzite (WZ), which is common in other III-V nanowir...

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of cryst...

Based on the WZ method, some series acceleration formulas are given. These formulas allow us to write down an infinite family of parametrized identities from any given identity of WZ type. Further, this family, in the case of the Zeta function, gives rise to many accelerated expressions for ζ(3). AMS Subject Classification: Primary 05A We recall [Z] that a discrete function A(n,k) is called Hyp...

This paper presents a new paradigm for the Distributed Video Coding (DVC), its coder architecture is quite different from the current DVC video coding architecture. In DVC codec we shift the complexity at encoder to the decoder side, which is suitable for many specific applications such as the low power surveillance, wireless mobile phone, and visual sensor network. Unlike the most popular curr...