نتایج جستجو برای: سوئیچ rf mems

تعداد نتایج: 42984  

2007
Kamran Entesari Gabriel M. Rebeiz

This article presents the response of RF microelectromechanical systems (RF MEMS), barium strontium titanate (BST), and gallium arsenide (GaAs)-based tunable filters and reconfigurable matching networks to a wideband code-division-multiple-access signal centered at 1.95 GHz. The RF MEMS tunable filter and impedance tuner result in very low intermodulation distortion and spectral regrowth compar...

2008
Raafat R. Mansour Mojgan Daneshmand

RF-MEMS technology has the potential of replacing many of the mechanical and semiconductor switches used in mobile and satellite communication systems. In many cases, such RF-MEMS switches would not only reduce substantially the size and power consumption, but also promise superior performance. The paper reviews the recent development of RF MEMS switches and switch matrices. Several configurati...

2018
Nizar Habbachi Hatem Boussetta Mohamed Kallala Ali Boukabache Patrick Pons Kamel Besbes

this paper presents a wide band RF MEMS VCO operating at 10 GHz. The designed VCO is based on high performances RF MEMS solenoid inductor. We have used HFSS software for design and analysis of different RF MEMS solenoid inductors. Best performances are obtained using SU8 dielectric substrate and copper coil: Qmax= 60.9, L = 2.6 nH at 10 GHz, and SRF= 20.8 GHz. Moreover, we have investigated the...

2007
Clark T.-C. Nguyen

Having now produced devices with sufficient Q, thermal stability, aging stability, and manufacturability, vibrating RF MEMS technology is already finding its way into next generation timing and wireless applications. At this juncture, the technology is now poised to take its next logical steps: higher levels of circuit complexity and integration. In particular, as vibrating RF MEMS devices are ...

2008
Sudhir Chandra Vivekanand Bhatt Ravindra Singh Preeti Sharma Prem Pal

In the present work, the deposition and characterization of dielectric, piezoelectric, semiconductor and conductor films by RF diode / RF magnetron sputtering process for applications in MEMS fabrication have been reported. Thin films of silicon dioxide, silicon nitride, amorphous silicon, zinc oxide and lanthanum doped lead zirconate titanate (PLZT) were prepared by RF sputtering process and e...

2008
A. G. Mukherjee M. E. Kiziroglou E. M. Yeatman

Recently deep submicron and SiGe (silicongermanium) bipolar CMOS technologies have enhanced the performance of Si-based radio frequency (RF) integrated circuits up to microwave frequencies. The integration of RF MEMS components, such as inductors and capacitors, could further improve the performance of key RF circuit blocks such as voltage controlled oscillators (VCO), low-noise amplifiers, fil...

Journal: :Micromachines 2016
Zhongliang Deng Xubing Guo Hao Wei Jun Gan Yucheng Wang

Abstract: This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS) switches. The antenna has a low profile and small size of 4 mm× 5 mm× 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiat...

2012
F. GIACOMOZZI V. MULLONI S. COLPO J. IANNACCI B. MARGESIN A. FAES

RF MEMS are assuming a great importance in the fast evolving telecommunication market and space applications. In the last years a flexible technology platform has been developed and continuously optimized at FBK (Italy) for the fabrication of RF MEMS basic components as well as complex RF circuits working in the frequency range from sub-GHz up to more than 100 GHz. The paper reports about the f...

Journal: :Journal of Japan Institute of Electronics Packaging 2004

2014
S. KRISHNAVENI DR. S. RAVI

In this work, a study of MEMS (Micro electro mechanical system) and SUGAR simulator is presented. A MEMS power switch is implemented and the insertion loss, return loss with respect to frequency and ON and Off states of these loss with respect to frequency is studied. Ultra low ON state insertion loss, high off state isolation and high RF signal power handling characteristics are achieved .Many...

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