نتایج جستجو برای: لیزر xecl
تعداد نتایج: 2624 فیلتر نتایج به سال:
Doped and undoped silica slabs were fabricated through the use of the sol-gel technique. Extended UV transmission was observed for HCl-catalyzed sol-gel silica. Under transverse pumping with a XeCl laser, narrow-linewidth (<0.9-nm) laser oscillation from silica slabs doped with coumarin 460 (C460) was achieved in a grating-resonator cavity configured in the grazing-indicence geometry. Tuning of...
Экспериментально обнаружено снижение коэффициента усиления активной среды эксимерного лазера с ядерной накачкой на В-Х- и С-А-переходах молекулы XeCl * (308 nm, 352 nm) при накачке Ar-Xe-CCl 4 смешанным гамма-нейтронным излучением ядерного реактора. Эффект обусловлен тушащим действием вторичных электронов, образующихся в среде под мгновенного гамма-излучения. значительно усиливается увеличении ...
در این مقاله، به بررسی اثر پارامترهای گوناگون بر شکل تپهای گسیلی لیزر 2CO تپی پرداخته شده است. راستا، عوامل مختلفی مانند: فشار گاز و همچنین طول تشدیدگر تغییر داده شدند هر حالت بههمراه اندازه انرژی آنها ثبت گردیدند. نتایج نشان میدهد که با افزایش گاز، بهشدت مییابد، بهگونهای 2 برابر 3 شدن فشار، 5 برابر، پهنای زمانی تپها نیم یکسوم زمان برساخت آنها نیز 9/0 7/0 اندازههای اولیهی خود م...
Transparent materials such as fused silica and quartz crystal were etched upon irradiation of an organic solution containing pyrene, using a conventional KrF or XeCl excimer laser. Threshold fluence for etching was 240mJ/cm for fused silica, which was remarkably low compared with that of direct ablation using conventional lasers. The etch rates depended on the concentration of pyrene. The mecha...
A new flow tagging technique was developed which visualizes small-scale flow structures by writing a spatial line of NO into an air flow homogeneously seeded with NO2. The NO-line was generated by photodissociation of NO2 at 308 nm using a XeCl excimer laser and was imaged by planar laser-induced fluorescence at various delays after its formation. With seeding levels of 600 ppm signal-to-noise ...
The shape of the beam profile of a discharge excited XeCl excimer laser using a spiker-sustainer electrical circuit has been varied from a ‘bell’-, through a ‘top-hat’-, to a ‘camel-back’-profile by varying the delay between the spiker pulse and the maincurrent with the circuit operating in the charge-mode. Fine-tuning of the beam profile can be done by varying the charging voltage of the main ...
We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...
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