نتایج جستجو برای: نانو la2o3
تعداد نتایج: 14559 فیلتر نتایج به سال:
Pulsed-laser atom probe tomography of p-type field effect transistors on Si- on-insulator substrates
Related Articles Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with liquid phase deposition-TiO2 gate oxide J. Vac. Sci. Technol. B 30, 052201 (2012) La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics J. Vac. Sci. Technol. A 30, 051507 (2012) SnO2-gated AlGaN/...
Gate dielectrics composed primarily of lanthana and zirconia were prepared by reactive evaporation. The stability of the layers during high temperature anneals was investigated. By controlling the oxygen partial pressure during heat treatment, lanthana and zirconia films could be protected against reaction with the underlying Si substrate and against the growth of low-« interface layers. The el...
Gradient Mn-La-Pt catalysts with three-layered structure of manganese dioxide (MnO2), lanthanum oxide (La2O3), and Platinum (Pt) for Li-O2 battery are prepared in this study. The mass ratio of the catalysts is respectively 5:2:3, 4:2:4, and 3:2:5 (MnO2: La2O3: Pt) which is start from the side of the electrolyte. The relationship between morphology structure and electrochemical performance of gr...
The standard Gibbs energy of formation of LaMnO3 has been measured in the temperature range from 900 to 1400 K using a solid-state cell incorporating a buffer electrode. The oxygen potential corresponding to the three-phase mixture MnO 1 La2O3 1 LaMnO3 has been measured using pure oxygen gas at 0.1 MPa as the reference electrode, and yttria-stabilized zirconia as the solid electrolyte. The buff...
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300 ◦C – 600 ◦C) and ambient (N2 or O2). High effective mobility of 312 cm2/Vs and low interface-state density of 6 × 1010 cm−2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) o...
Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...
Latest trends in dental restorative ceramics involve the development of full-contour 3Y-TZP ceramics which can avoid chipping of veneering porcelains. Among the challenges are the low translucency and the hydrothermal stability of 3Y-TZP ceramics. In this work, different trivalent oxides (Al2O3, Sc2O3, Nd2O3 and La2O3) were selected to dope 3Y-TZP ceramics. Results show that dopant segregation ...
A SnO2 nanocrystallite-based photoanode was prepared using tin (iv) chloride and fructose via a one-pot hydrothermal method, and its structural and morphological properties were studied. Structural observations revealed tetragonal crystals of SnO2, and morphological studies confirmed the presence of spherical nanoparticulates. Furthermore, encapsulating the surface of the SnO2 photoanode (+N719...
Polymer solid electrolytes (SEs) with high safety and flexibility are ideal for advanced lithium-metal solid-state batteries (SSBs). Among various polymer SEs, polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) SEs have gained increased attention their dielectric constants, ionic conductivity, excellent flexibility. However, severe side reactions at the interface caused by decomposition ...
نانو ذرات TiO2 دوپه شده با +La3 با روش سل- ژل و با استفاده از مادههای اولیهی TiCl4 و La(NO3)3.6H2O سنتز شدند. شناسایی فراورده با استفاده از روشهای XRD ،XRF ،SEM ،EDX ،Uv-vis ،BET-BJH انجام شد. نتیجهها نشان میدهند که مادهی سنتزی حاوی 6 درصد یون +La3 بوده و حضور فازهای آناتاز و روتیل TiO2 در کنار La2O3 تأیید شد. شکاف انرژی این ماده eV 2/5، مساحت سطح ویژه آن2m/g 59/3 و متوسط قطر حفرات آن nm ...
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