Nanowire band-to-band tunneling field-effect transistors ͑TFETs͒ are simulated using the Wentzel– Kramers–Brillouin ͑WKB͒ approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling ͑PAT͒. It is found that the WKB approximation properly works if one single imaginary path connecting the valence band ͑VB͒ and the conduction band ͑CB͒ dominates the tunne...

To correctly describe band-to-band tunneling in semiconductor materials with an indirect band gap like silicon electron-phonon scattering must be taken into account. However, combining electron-phonon scattering and an atomistic full-band basis, as needed in nanoscale device simulations, is a real challenge from a computational and theoretical point of view. We have developed a quantum transpor...

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform n...

This paper presents an analytical model for the potential distribution of a p-n-i-n tunneling field effect transistor (TFET). Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. According to our knowledge, there is no analytical analysis for this structure in the literature, and t...

The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by electric field inside film. PDM assumes a constant strength due to band-to-band tunneling (BTBT) electrons separation holes high fields. In this manuscript we present more complex expansion common models simulate steady state test a...

In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-relat...

-The phonon-assisted band-to-band tunneling rate in crystalline silicon is calculated using the equilibrium Green's function formalism. Electron-phonon collisions, that balance the momentum, are included in the perturbation operator. Houston-type solutions are used for the time dependence of the Bloch states. RPA deeoupling yields a tractable expression for the differential tunneling conductivi...