Photoluminescence lifetimes have been measured at room temperature as a function of carrier density in ZnCdSe/ZnSSe quantum wells. We show that, at low carrier density (5310 – 5 310 cm), nonradiative recombination dominates, while radiative recombination becomes more dominant as the carrier density is increased from 5310 to 5310 cm. Above ;5 310 cm, band filling effects are shown to produce a s...
