The main aim of this work is to study the effect symmetric and asymmetric spacer length variations towards source drain on n-channel SOI JL vertically stacked (VS) nanowire (NW) FET at 10 nm gate (LG). Spacer proved be one stringent metrics in deciding device performance along with width, height aspect ratio (AR). physical variants are (LSD), side (LS) (LD). simulation results give highest ION/...

Article history: Received 24 January 2008 Received in revised form 13 August 2008 Available online 1 October 2008 0026-2714/$ see front matter 2008 Elsevier Ltd. A doi:10.1016/j.microrel.2008.08.002 * Corresponding author. Tel.: +886 6 2080398; fax: E-mail addresses: [email protected] edu.tw (Y.-K. Fang). This paper reports to improve performances of sub-90 nm CMOSFETs with a notch-gat...

In this paper, we perform two-dimensional simulations of cross-flow forward osmosis (FO) membrane modules in the presence of draw and feed channel spacers. For this purpose, the equations corresponding to the conservation of mass, momentum, and convection-diffusion for the mass fraction of solute are solved using a commercial finite volume flow solver. We consider six configurations of channel ...

In this paper, we have demonstrated successfully a new approach for evaluating the hot-carrier reliability in submicron LDD MOSFET with various drain engineering. It was developed based on an efficient charge pumping measurement technique along with a new criterion. This new criterion is based on an understanding of the interface state (Nit) distribution, instead of substrate current or impact ...

A two-dimensional, particle-based biofilm model coupled with mass transport and computational fluid dynamics was developed to simulate autotrophic denitrification in a spiral-wound membrane biofilm reactor (MBfR), where hydrogen is supplied via hollow-fiber membrane fabric. The spiral-wound configuration consists of alternating layers of plastic spacer net and membrane fabric that create rows o...

In this article, the effects of non-ideal cross-sectional shapes stacked nanosheet FET (NSFET) and with inter-bridge channel (TreeFET) are studied through calibrated 3D TCAD simulations. The impact on electrical characteristics due to insufficient/excessive etch processes investigated in terms inner spacer (IS), (NS) channel, (IB) channel. Simulation results show that geometry material IS have ...

Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release covered detail by aid 3-D simulations. The simulation results show physical weakness suspended nanosheets and impact thickness. Inner spacer engineering based on geometry elastic property are suggested for better stability. f...

80-nm self-aligned nand p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The nand p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 μA and 3...

The coupled acoustic-gravity field channel used in this study is schematically illustrated in Fig. 5.1. A lead-zirconate-titanate transducer with 510kHz resonant frequency (170mm-length × 15mm-width × 4.2mm-thick, Fuji-ceramics Inc., Japan) was glued on a 5.00mm-thick Pyrex glass plate using epoxy adhesive. Boat-shaped PTFE spacer (0.8mm-thickness) was sandwiched between the glass plate with tr...