A mathematical model for the effect of oxide thickness on ambient conduction is provided in Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as future IC (integrated circuit) technology, suppression ambipolar behaviour SB-CNTFET imperative. The nature contributes to a high amount leakage current. tox ≈ 49.91nm uses dielectric gate with inhibit behavi...

The adder circuit is basic component of arithmetic logic design and that the most important block processor architecture. Moreover, power consumption main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used designs with high performance. A creative substitute highspeed, less power, small size in area CNTFET. This paper presents 1- bit f...

In this paper, we propose new universal designs of ternary-valued logic (TVL) with high-speed, low-power and full swing output using carbon nanotube FETs (CNTFETs). All of the TVL functions (3 functions) can be implemented in these designs. Ternary value logic is a promising alternative to binary logic due to the reduced integrated circuit (IC) interconnects and chip area. Therefore, a universa...

This study presents new low-power multiple-valued logic (MVL) circuits for nanoelectronics. These carbon nanotube field effect transistor (FET) (CNTFET)-based MVL circuits are designed based on the unique characteristics of the CNTFET device such as the capability of setting the desired threshold voltages by adopting correct diameters for the nanotubes as well as the same carrier mobility for t...

In this paper we analyze threshold voltage and body coefficient (Υ) on varying the oxide thickness in CNTFET. Simulation analysis of drain current and drain voltage characteristic is discussed and found that due to decreasing nature of quantum capacitance in CNTFET, the factor (Υ) has still impact on device and it is not negligible in deep nano regime. We also observed from simulation on nanohu...

The Field Effect Transistor using nanotechnology is known as Carbon Nanotube Field Effect Transistors (CNTFET). Which promising nano-scaled devices for implementing high performance very dense and low power circuits. A Carbon Nanotube Field Effect Transistor refers to a FET with a single CNT or an array of CNT's as the channel material instead of bulk silicon in the traditional MOSFET structure...

In the world of Integrated Circuits, Complementary Metal–Oxide– Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET and Carbon Nan...

Analysis of the electrostatic characteristics and the gate capacitance of typical nanostructured carbon nanotube field effect transistors (CNTFETs) were performed numerically. A previously developed parallelized electrostatic Poisson’s equation solver (PPES) is employed, coupled with a parallel adaptive mesh refinement (PAMR) to improve the numerical accuracy near the region where variation of ...

This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFETbased ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices. These characterist...