Up to a thirty-fold detectivity enhancement is achieved for an InAs quantum dot infrared photodetector (QDIP) by the excitation of surface plasma waves (SPWs) using a metal photonic crystal (MPC) integrated on top of the detector absorption region. The MPC is a 100 nm-thick gold film perforated with a 3.6 microm period square array of circular holes. A bare QDIP shows a bias-tunable broadband r...

A stacked double-layer (SDL) thermopile-based infrared sensor, which comprised of 96 thermocouples on a suspended membrane, has been designed and fabricated with a CMOS-compatible process. The thermoelectric properties were characterized, and responsivity (Rs) of 202.8 V W−1 and detectivity (D∗) of 2.85∗108 cm Hz1/2 W−1 for a SDL thermopile were derived. (Some figures may appear in colour only ...

In this work, we theoretically demonstrate that the ultimate detectivities in multi-stage interband cascade infrared photodetector configurations are higher than what can be achieved a conventional single-absorber detector structure any circumstance even including where carrier diffusion length is very long. Detailed derivations provided to analytically show limit of an infinite length, detecti...

Near-IR semiconductor colloidal nanoplatelets (NPs) are a new and promising class of materials for the development photodetectors because they can effectively absorb visible infrared optical radiation. In this work, we study photoconductivity HgTe with ligands 1,2-ethanedithiol tetrabutylammonium iodide. It has been shown that choice is key factor in achieving high operational characteristics. ...

A MoSe2/Si heterojunction photodetector is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV-visible-NIR, high detectivity of 7.13 × 1010 Jones, and ul...

Photodetectors capture optical signals with a wide range of incident photon flux density and convert them to electrical signals instantaneously. They have many important applications including imaging, optical communication, remote control, chemical/biological sensing and so on. Currently, GaN, Si and InGaAs photodetectors are used in commercially available products. Here we demonstrate a novel...

High-quality, all-inorganic CsPbBr3/Cs4PbBr6 composite perovskite nanocrystals (NCs) were obtained with all-solution-processing at room temperature, and a photodetector (PD) high detectivity was realized based on NCs. The (D*) of the proposed PD is 4.24 × 1012 Jones under 532 nm illumination, which among highest levels for PDs In addition, linear dynamic range (LDR) 115 dB 1 V bias also realize...