Diamond coatings were successfully deposited on tool steel substrates without using any external diffusion barrier layers. The diamond film deposition was performed in a hot filament chemical vapour deposition (HFCVD) reactor. In the first step, a high substrate temperature and a high methane percentage were used to achieve a faster critical carbon concentration and hence a shorter incubation t...

We monitored AEs during micro-indentation and pulse laser spallation test of CVD diamond film deposited on sintered SiC, and classified the fracture type by Lamb wave AE analysis. In the indentation test with a Rockwell sphere indenter, we observed Hertz ring cracks and simultaneously detected AEs from Mode-I fracture. Crack types were classified from polarity distribution of the first arrival ...

Diamond films were successfully synthesized in both parallel-plate radio frequency ~rf: 13.56 MHz! CH4 and CH3OH plasmas with injection of H and OH radicals generated in the remote microwave ~2.45 GHz! H2 /H2O plasma. Effects of H, OH, and CH3 radicals on the diamond film formation in the rf plasma reactor were investigated by the formation of diamond films employing radical injection technique...

The diamond chemical vapor deposition (CVD) process has been investigated theoretically and the morphological instabilities associated with the growth of diamond films have been examined with a model based on the continuum species conservation equation coupled to surface reaction kinetics. A linear stability analysis and numerical calculations have been carried out to determine critical paramet...

A closed system hot filament chemical vapor deposition (CVD) reactor has been used to deposit diamond films on silicon substrates. A fixed charge of hydrogen gas is fed into the deposition system until the desired deposition pressure level is reached. A solid graphite cylindrical rod held above the tungsten filament was the carbon source. System parameters for diamond film growth have been dete...

The photoemission properties of thin diamond and fullerene films were investigated for advanced accelerator applications, using subpicosecond laser pulses at three different wavelengths (650, 325, and 217 nm). The quantum efficiency (QE) obtained at 217 nm with a boron-doped, p-type, (111) polycrystalline diamond film (2.6 lop4) was only five times smaller than the QE obtained with a mirror pol...

A microchip containing gated field-emitter display (FED) cells is designed and fabricated using vapor-deposited ptype polycrystalline diamond films and employing an integrated circuit (IC)-compatible diamond film technology on oxidized 4in Si wafers. Current–voltage (I V ) data, measured in a diode configuration at 10 6 torr, show Fowler–Nordheim (F–N) field emission behavior. A 1 4 pixel diamo...