The effect of a halo doping on SCE in PiFET is investigated. The reduction of the separation between two PiOX layers (LPiOX) followed by a local agglomeration of halo doing region makes the reverse short channel effect efficiently suppressed. As the LPiOX decreases, the subthreshold swing decreases, and the DIBL increases. The final optimized condition is LPiOX =0.7× Lg~1.0× Lg.

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

In this paper it has been demonstrated that a shielded channel made by varying the side gate length in silicon-on-nothing junctionless transistor not only improves short effect but also improve performance of CMOS circuits device. The proposed device dual stack silicon on nothing (SCDGSSONJLT) drain induced barrier lowering (DIBL), cut-off frequency and subthreshold slope are improved 20%, 39% ...

GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted much attention owing to the low-cost and large area availability of Si substrate. In this paper, 90-nm-gate-length InAlN/GaN HEMT was fabricated device electrical properties were studied. The presents a low drain-induced barrier lowing (DIBL) 43 mV/V, parasitic source resistance (RS) 0.91 ??mm, peak intrinsic tra...

In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-le...

Due to the thin InAlN barrier layer, leakage current is a serious problem in InAlN/GaN high-electron-mobility transistors (HEMTs). The InGaN back-barrier can raise conduction band of GaN buffer layer and enhance carrier confinement, resulting reduced current. surface oxidation treatment prior gate deposition form an oxide reduce In this study, using both technologies, record low off (Ioff) high...

Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K varied side-gate biasing ( ${V}_{\text {side}}$ ). The subthreshold slope (S...