نتایج جستجو برای: dielectric constant

تعداد نتایج: 251841  

Journal: :journal of physical & theoretical chemistry 2005
m. aghaie f. ghaemi amiri m. giahi

using the evaporating method, the solubility of potassium nitrate was determined in various mixtures containing water and ethanol at 25°c. the results show that the solubility of kno3 decreases with increasing the mass percent of ethanol in the mixtures. this trend is along with decreasing the dielectric constant of water+ethanol mixtures. moreover, it can be concluded that the totqal solubilit...

Journal: :international journal of nano dimension 0
p. rejani nano science research lab, department of chemistry, d.b.college,sasthamcotta, kollam,kerala, india. a. radhakrishnan nano science research lab, department of chemistry, d.b.college,sasthamcotta, kollam,kerala, india. b. beena nano science research lab, department of chemistry, d.b.college,sasthamcotta, kollam,kerala, india.

zno nanorod was prepared by microwave assisted method. the crystal structure of the nano powders were confirmed by x-ray diffraction analysis and the mean particle size was estimated by the scherrer,s formula .the surface morphology of the nano particles were analyzed by   using sem . the absorption spectrum of the material in the uv-vis range was recorded .the energy band gap of the material w...

Journal: :journal of physical & theoretical chemistry 2010
f. najafi l. saedi f. mollaamin h. aghaie

in this work, we have studied the solvent effects on values of gibbs free energy, enthalpy. entropy and dipolemoment in spread of solvents around anticancer thug of temreolomide that is an alighting agent. for thispurpose, the quantum mechanic calculations bawd on hanrertnick theory at the sto-36/3-2ith levels havebeen done. moreover, we have compared resulted thermodynamic values in gas phase ...

2008
Mehrez Zribi Aurélie Le Morvan Nicolas Baghdadi

The objective of this paper is to present the contribution of a new dielectric constant characterisation for the modelling of radar backscattering behaviour. Our analysis is based on a large number of radar measurements acquired during different experimental campaigns (Orgeval'94, Pays de Caux'98, 99). We propose a dielectric constant model, based on the combination of contributions from both s...

Journal: :journal of physical & theoretical chemistry 2010
m.h. ghorbani r. fazaeli a. ghoorchian

in this work, we investigated the stability of molybdate-phosphonic acid (mpa) complex by density functionaltheory (dft) computations in six solvents with the dielectric constant ranging from 1.92 to 10.36. the methodsare used for calculations are b3lyp and b3pw9 i that have been studied in two series of basis sets: d95nand6-31+g (d,p) for hydrogen and oxygen atoms; lanl2dz for mo and phosphoru...

Journal: :journal of nanostructures 2014
a. hayati a. bahari

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

Journal: :international journal of nano dimension 0
s. amirtharajan nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india. p. jeyaprakash nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india. j. natarajan nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india. p. natarajan nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india.

porous silicon (ps) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying hf concentrations in the electrolytic solution. the structural, surface morphological, optical and surface composition analysis of the prepared samples were done by x-ray diffraction (xrd), scanning electron microscopy (sem), photoluminescence (pl) and fourier transform infrared (fti...

2010
Sam Wetterlin

Introduction The dielectric constant of PCB material is important in determining the trace width required to produce a characteristic impedance of 50 ohms, or any other desired impedance. The most commonly used material, FR-4, has a dielectric constant that may vary widely between manufacturers or batches, and also varies over frequency. It is useful to have a method to determine the dielectric...

2004
J. Robertson

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

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