When a thin dielectric film placed between two semi-infinite media is irradiated with monochromatic plane waves, a standing wave is produced in the film. An analytical expression for the standing wave intensity within the film is derived. This expression is then expanded to include the effects of other dielectric films on either side of the film or an inhomogeneous film. Applications of these e...

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain s...

This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-...

In this paper, we present the design and fabrication of hybrid dielectric-metallic back surface reflectors, for applications in thin film amorphous silicon solar cells. Standard multilayer distributed Bragg reflectors, require a large number of layers in order to achieve high reflectance characteristics. As it turns out, the addition of a metallic layer, to the base of such a multilayer mirror,...

This article presents the use of a microstrip dual resonator for nondestructive permittivity characterization of a ferroelectric thin film at microwave frequencies. The dual-resonator measurement fixture consists mainly of two capacitively coupled microstrip resonators, with the ferroelectric thin film covering the gap between the two resonators. The dielectric constant and loss tangent of the ...

We present theoretical calculations of the Casimir force for Au thin films near the insulator-conductor transition that has been observed experimentally. The dielectric function of the Au thin films is described by the Drude-Smith model. The parameters needed to model the dielectric function such as the relaxation time, plasma frequency and the backscattering constant depend on the thickness of...

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), ...

HHigh-k LaAlO3 (LAO) thin films with and without Al2O3 buffer layers were deposited on n-type silicon substrates using a pulsed laser deposition method. The dielectric constant of the LAO thin film increased from 5.2 to 23.1 as its thickness increased from 20 to 500 Å. The effective dielectric constants of the LAO (120 Å)/Si and LAO(105 Å)/Al2O3(15 Å)/Si were 12.5 and 23.2, respectively. The fl...

A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost co...

Metal–insulator–metal (MIM) capacitors have been fabricated using high-κ La2O3\HfO2 dielectric stacks deposited using Dense Plasma Focus (DPF) and were subsequently studied. DPF is a unique machine used for the very first time to fabricate dielectric stacks within a MIM structure as it can be used both to deposit nano-size thin film as well as can also be used to change the properties of the po...