Scaling challenges and limitations of conventional silicon transistors have led the designers to apply novel nano-technologies. One of the most promising and possible nano-technologies is CNT (Carbon Nanotube) based transistors. CNFET have emerged as the more practicable and promising alternative device compared to the other nanotechnologies. This technology has higher efficiency compared to th...

Leading digital circuits namely register, flipflops, state machines and counters drive operational aspects potential applications in Integrated Circuit (IC) industry. MOS Current Mode Logic (MCML) based implementations with rapid response simultaneous generation of complemented output is all set to become indispensable nano regime This paper attempts optimize address performance-based analysis ...

The size and parameter optimization for the 5-nm carbon nanotube field effect transistor (CNFET) static random access memory (SRAM) cell was presented in Part I of this article. Based on that work, we propose a (CNT) SRAM array composed schematically optimized CNFET CNT interconnects. We consider interconnects inside metallic single-wall (M-SWCNT) bundles to represent metal layers 0 1 (M0 M1). ...

Power consumption and especially leakage power are the main concerns of nano MOSFET technology. On other hand, binary circuits face a huge number interconnection wires, which results in dissipation area. Researchers introduced emerging nanodevices multiple-valued logic (MVL) as two feasible solutions to overcome challenges mentioned above. Carbon nanotube field-effect transistor (CNFET) is one ...

High speed Full-Adder (FA) module is an important element in designing high performance arithmetic circuits. In this paper, I propose a high speed multiple-valued logic FA module. The proposed FA is designed and constructed with the use of 3 capacitors and 14 transistors, wh e r e t h e t r a n s i s t or s a r e c o n s t r u c t e d b y carbon nano-tube field effect transistor (CNFET) technol...

As a potential alternative to the complementary metal-oxide semiconductor (CMOS) technology, many researchers are focusing on carbon-nanotube field-effect transistors (CNFETs) for future electronics. However, existing studies report the advantages of CNFETs over CMOS at the device level by using small-scale circuits, or over outdated CMOS technology. In this paper, we propose a methodology of a...

Submitted for the MAR05 Meeting of The American Physical Society Diameter dependence of carbon nanotube transistor performance ZHIHONG CHEN, JOERG APPENZELLER, JOACHIM KNOCH, Institution fuer Schichten und Grenzflaechen, YU-MING LIN, PHAEDON AVOURIS, IBM T. J. Watson Research Center — As has been shown before, single wall carbon nanotube field-effect transistors (CNFETs) behave as Schottky barr...

This paper presents a CNFET (Carbon Nano-tube FET) based MT (Multi-Threshold)-SRAM (Static Random Access Memory) design on the leakage reduction mechanism. A multi-threshold logic is employed for reducing current during read/write operations. Here, technique used to insert high threshold sleep control low circuit. The insertion performed in serial manner. transistors are very useful deriving su...

Carbon Nanotube FET technology is a new promising technology for high speed digital applications. This paper investigates optimizing Analog Circuits architecture to take advantage of this technology in mixed mode ICs and point at the optimum topology for CNFETs for the first time. It was found through simulations that the optimum topology for high-bandwidth analog circuits is obtained by using ...