نتایج جستجو برای: effect transistor hjfet

تعداد نتایج: 1654265  

Journal: :Journal of Applied Physics 2013

Journal: :journal of nanostructures 2013
n. manavizadeh f. raissi e. asl-soleimani

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

Journal: :Nature communications 2014
Guangyu Xu Jeffrey Abbott Ling Qin Kitty Y M Yeung Yi Song Hosang Yoon Jing Kong Donhee Ham

Field-effect transistor biomolecular sensors based on low-dimensional nanomaterials boast sensitivity, label-free operation and chip-scale construction. Chemical vapour deposition graphene is especially well suited for multiplexed electronic DNA array applications, since its large two-dimensional morphology readily lends itself to top-down fabrication of transistor arrays. Nonetheless, graphene...

This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...

2015
Vaishali S. Chirde Usha Jadhav I. C. Lin Y. H. Cho Y. M. Yang S. V. Kumar C. H. Kim S. Khan H. Kukner P. Raghavan

In VLSI, scaling methods plays an important role in reducing the power dissipation from one technology node to other technology node. The two major constraints for delay in any VLSI circuits are latency and throughput. The negative bias temperature instability (NBTI) effect occurs when a pMOS transistor is under negative bias (Vgs= -VDD) increasing the threshold voltage of pMOS transistor and r...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

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