We analyzed the effect of strains on material transport in a typical dual damascene copper interconnect via under electromigration stress. The electromigration model incorporates all important driving forces for atom migration coupled with the solution of the electrical and thermal problems. Our approach differs from others by considering a diffusivity tensor in the transport equation taking in...

Designing reliable CMOS chips involve careful circuit design with attention directed to some of the potential reliability problems such as electromigration and hot carrier e ects. This paper considers logic synthesis to handle electromigration and hot carrier degradation early in the design phase. The electromigration and the hot carier e ects are estimated at the gate level using signal activi...

Electromigration failure is a major reliability concern for integrated circuits. The continuous shrinking of metal line dimensions together with the interconnect structure arranged in many levels of wiring with thousands of interlevel connections, such as vias, make the metallization structure more susceptible to failure. Mathematical modeling of electromigration has become an important tool fo...

When electric current flows in a solder bump, electromigration generates stress, but creep relaxes it. After some time, the bump develops a steady-state stress field. We present a theory to show that the two processes — electromigration and creep — set an intrinsic length. When the intrinsic length is large compared to the height of the bump, electromigration is fast relative to creep and the s...

Many macroscopic aspects of electromigration damage in thin metal films have been investigated by means of Monte Carlo simulations based on simplified physical model. The employed model, can be described as a middle-scale model, in which the physical system is modeled with a high level of abstraction, without a detailed atomic physical model of the system. Among the many effects of the electrom...

Designing reliable CMOS chips involve careful circuit design with attention directed to some of the potential reliability problems such as electromigration and hot carrie:r effects. This paper considers logic synthesis to handle electromigration and hot carrier degradation early in the design. phase. The electromigration and the hot carier effects are est,imated at the gate level using signal a...

Review examines the causes, and potential solutions, of electromigration failures.

Herein, it is demonstrated that high DC electric current densities can be used to tailor the microstructure of iron–carbon thin films. Specifically, elongated ferrite grains formed in a nanocrystalline matrix via process involving electromigration-induced carbide migration. Herein this article, parameters are required produce and control grain formation Fe(C) system mapped out they interpreted ...

This work studies the electromigration of solder joints in an encapsulated copper post wafer level package (WLP) by finite element modeling. Experimental data showed that the electromigration failure occurs in solder joints on the printed circuit board (PCB) side due to the current crowding. In order to improve the electromigration performance on the PCB side with a copper post WLP, two new lin...