نتایج جستجو برای: electron field diode

تعداد نتایج: 1079656  

2014
Yunyun Li Jun Zhou Fabio Marchesoni Baowen Li

Rectification of electron wave-packets propagating along a quasi-one dimensional chain is commonly achieved via the simultaneous action of nonlinearity and longitudinal asymmetry, both confined to a limited portion of the chain termed wave diode. However, it is conceivable that, in the presence of an external magnetic field, spatial asymmetry perpendicular to the direction of propagation suffic...

2016
Wen-Chung Chang Sheng-Chien Su Chia-Ching Wu

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction...

2016
Tao Cao Laitang Luo Yifeng Huang Bing Ye Juncong She Shaozhi Deng Jun Chen Ningsheng Xu

The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nan...

Journal: :Microelectronics Reliability 2012
Benoit Lambert Nathalie Labat D. Carisetti S. Karboyan Jean-Guy Tartarin J. Thorpe Laurent Brunel Arnaud Curutchet Nathalie Malbert E. Latu-Romain M. Mermoux

In this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300°C. By comparing gate pad topology and by localized FIB cuts, Optical Beam Induce Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. Electrical characterizati...

1999
J. P. Verboncoeur C. K. Birdsall

The transmitted current in a crossed̄eld gap has been characterized analytically by a number of authors [1], [4], [6] and [7]. Using a one dimensional PIC simulation, PDP1 [9], we explore the behavior of the crossed̄eld diode at B = BHull. For mono-energetic (cold) emission, a rapid reduction of transmitted current is observed when the injected current exceeds the critical current by just 1%. Add...

2012
S. T. Bartsch A. Rusu A. M. Ionescu

Related Articles Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping Appl. Phys. Lett. 101, 153505 (2012) Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors Appl. Phys. Lett. 101, 153504 (2012) Hybrid vertical transistor based on controlled lat...

Journal: :iranian journal of medical physics 0
alireza mohammadkarim department of medical radiation engineering, science and research branch, islamic azad university, tehran, iran ph.d student, department of medical physics, faculty of medical sciences, tarbiat modares university, tehran, iran hasan ali nedaie department of radiotherapy, oncology and medical physics, tehran university of medical sciences, tehran, iran mahmoud allahverdi department of medical physics, tehran university of medical sciences, tehran, iran mahbod esfehani department of radiation oncology, cancer institute of iran, tehran university of medical sciences, tehran, iran alireza shirazi department of medical physics, tehran university of medical sciences, tehran, iran ghazale geraily department of medical physics, tehran university of medical sciences, tehran, iran

introduction evaluation of the delivered dose of externally wedged photon beams by external diode dosimeters during the treatment process requires the estimation of exit surface dose correction factors in various wedge angles and field sizes. materials and methods a system of absorbed dose evaluation, using p-type diode dosimeters placed on the exit surface of a phantom, was characterized for e...

پایان نامه :دانشگاه تربیت معلم - تهران - دانشکده علوم 1393

in this thesis, structural, electronical, and optical properties of inverse pervskite(ca3pbo) in cubic phase have been investigated.the calculation have been done based on density functional theory and according to generalized gradiant approximate (gga) as correlating potential. in order to calculate the configurations, implementing in the wien2k code have been used from 2013 version. first of ...

2015
Raymond W. Lemke

Atmospheric propagation experiments at the Air Force Weapons Laboratory utilize a 150 KA, 6 MV relativistic electron beam produced by field emission in a foil diode. To characterize the beam for the experiments requires an understanding of beam formation in the diode. To this end CCUBE, a sophisticated two-dimensional, time dependent, particle-in-cell code developed at Los Alamos National Labor...

Journal: :J. Comput. Meth. in Science and Engineering 2011
Aranya B. Bhattacherjee Suman Dudeja

We report an investigation of electron conduction in oligophenyl based double barrier molecular device. We have carried out analytical calculations and numerical simulations on isolated molecules, consisting of aromatic π conjugated system made up of three phenyl rings separated by insulator groups −CH2−, −SiH2−, −GeH2− and −SnH2−. We show analytically as well as numerically that when the two i...

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