Abstract: In the last two decades, the Maximum Entropy Principle (MEP) has been successfully employed to construct macroscopic models able to describe the charge and heat transport in semiconductor devices. These models are obtained, starting from the Boltzmann transport equations, for the charge and the phonon distribution functions, by taking—as macroscopic variables—suitable moments of the d...

Elemental tellurium is a strongly spin-orbit coupled Peierls-distorted semiconductor whose band structure features topologically protected Weyl nodes. Using time-dependent density functional theory calculations, we show that impulsive optical excitation can be used to transiently control the amplitude of Peierls distortion, realizing mechanism switch between three states: semiconductor, metal a...

The current study explored the implementation of Standard Model theoretically on atomic elements periodic table. Theoretically, pure elemental mass was probed first time from perspectives origin and forces unification. In-depth analyses will have vital applications in nuclear, aerospace, electronics, semiconductor, defense industries. literature deals with materials origin. Elemental fundamenta...

Both the static and kinetic properties of defects play fundamental roles in determining physical semiconductors. Compared to defects, a comprehensive understanding different diffusing types semiconductors is still lacking. In this article, based on extensive first-principles calculations, we have done comparative study diffusion mechanisms point Si (a typical elemental semiconductor) GaN compou...

Semiconductor devices with enhanced efficiency, resilience, and/or optimized to specific applications/environments rely increasingly on the incorporation of III-V random alloys that have been engineered to possess certain required optoelectronic properties. When these materials are grown, however, challenges with non-random elemental arrangements can greatly affect – and in some cases eliminate...

Direct measurement of trace elements on wafer surfaces by TXRF is quick and nondestructive. SR-TXRF has similar features to TXRF, but much better detection limits mainly due to the high flux. VPD-TXRF and VPD-SR-TXRF improve the detection capability to various degrees. However, some elements (e.g. Cu) may have recovery problems at certain concentrations. VPD-ICP-MS is a destructive technique be...