The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial g...

Graphene, a monoatomic layer of graphite hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This article reviews the controlled growth of epita...

Epitaxial NbC thin films were grown by a chemical solution technique, polymer assisted deposition. High quality epitaxial NbC film showed a transition temperature of 10 K and a hardness of 19.54 GPa.

Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.

A combination of in situ and post-deposition experiments were designed to probe surface roughening pathways leading to epitaxial breakdown during low-temperature (Ts595– 190 °C) growth of Ge~001! by molecular beam epitaxy ~MBE!. We demonstrate that epitaxial breakdown in these experiments is not controlled by background hydrogen adsorption or gradual defect accumulation as previously suggested,...

We review recent developments in the epitaxial integration of multifunctional oxide thin film heterostructures on silicon (Si). Perovskite oxides have been extensively studied for use in multifunctional devices due to a wide range of functional properties. To realize multifunctional oxide devices, these multifunctional films should be integrated directly on Si, maintaining high crystalline qual...

Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr12xTiO3 ~LSTO!, deposited onto ~001! silicon wafers by molecular-beam epitaxy is then used to seed $001%-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 ~PZT! as the ferroelectric layer ...

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. W...

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...

Epitaxial strain can substantially enhance the spontaneous polarizations and Curie temperatures of ferroelectric thin films compared to the corresponding bulk materials. In this Letter we use first principles calculations to calculate the effect of epitaxial strain on the spontaneous polarization of the ferroelectrics , , and , and the multiferroic material . We show that the epitaxial strain d...