We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor pe...

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

Articles you may be interested in Separation of interlayer resistance in multilayer MoS2 field-effect transistors Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Appl.

Articles you may be interested in A simple drain current model for single-walled carbon nanotube network thin-film transistors Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template Appl. Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate Complementary voltage inv...

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...

We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modu...

Articles you may be interested in Publisher's Note: " Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing " [Appl. pH sensing properties of graphene solution-gated field-effect transistors Detection of sulfur dioxide gas with graphene field effect transistor Appl. Probing transconductance spatial variation...