Reactive ion etching (RIE) using fluorocarbon chemistry is widely used to open contact holes in dielectric layers for very large scale integration (VLSI) since it provides high anisotropy and selectivity over Si. However, it is known that the RIE leaves fluorocarbon residues on the exposed surface after etching of silicon dioxide [1,2]. These residue layers were reported to be nonvolatile, chem...

In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...

In spite of their interest, viscosities of fluorocarbon compounds are scarce, and the available data are unreliable and of poor accuracy. In this work, viscosity measurements of linear, cyclic, aromatic, and R-substituted perfluorocarbons were carried out in the temperature range between (298.15 and 318.15) K using an Ubbelohde viscometer. The experimental results show that fluorinated compound...

The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF3 , C3F6 , and C3F6/H2 , indicate that the reactor wall temperature is an important parameter in the etch process. Ade...

We present and discuss results obtained in studies of the mechanisms underlying various feature size dependencies of SiO2 etching in inductively coupled fluorocarbon plasmas. The variation of the fluorocarbon deposition rate and the SiO2 etch rate with both feature size and rf bias power has been measured in a variety of constant aspect ratio features for both an etch stop (C3F6 /H2) and a none...

We describe a new analytical approach--"capsule chemistry"--for high-speed, selective analysis of a wide variety of analytes. Sequential micro-aliquots of sample and reagents are encapsulated within an inert fluorocarbon liquid. The resulting "test capsule" is introduced into a single analytical flow path, composed of a solid fluorocarbon, Teflon, where the sample is incubated, mixed, reacted, ...

We report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity with excellent operation stability in air and even in water. The fluoropolymers possess high hydrophobicity for efficient removal of water molecules from the vicinity of nanotubes, which are ...

Recovery and purification difficulties can limit the yield and utility of otherwise successful organic synthesis strategies. A "fluorous synthesis" approach is outlined in which organic molecules are rendered soluble in fluorocarbon solvents by attachment of a suitable fluorocarbon group. Fluorocarbon solvents are usually immiscible in organic solutions, and fluorous molecules partition out of ...

A series of colored hydrocarbon and fluorocarbon tagged 1-fluoro-4-alkylamino-anthraquinones and 1,4-bis-alkylamino-anthraquinone probe molecules were synthesized from a (fluorinated) alkyl amine and 1,4-difluoroanthraquinone to aid in the development of fluorous separation applications. The anthraquinones displayed stacking of the anthraquinone tricycle and interdigitation of the (fluorinated)...

We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...