transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...

Among the most important components in complex and high-power mechatronic systems is transistor. The High Electron Mobility Transistor (HEMT) a technology under development. This paper presents hybrid Reliability Based Design Optimization (RBDO) method applied to HEMT order improve its performance reliability. execution of RBDO processes requires development coupling two models: finite element ...

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We have designed and simulated a 10-nanometer regime gate High Electron Mobility Transistor (HEMT) with an undoped region (UR) under the high k dielectric as hafnium oxide (HfO2). The thickness of metal gate(G) regions are equal but length channel(C) is not equivalent. proposed Undoped reduces maximum electric field(V) in channel increases drain current significantly. High-K structure obtained ...

The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...