Auger recombination is a significant loss mechanism in many optoelectronic devices. We use first-principles methods based on density functional theory to study the relative importance of direct and indirect phonon-assisted Auger recombination in GaAs and related alloys. Energy and momentum of the recombining electron−hole pair can be transferred to an Auger electron (eeh process) or an Auger ho...

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi’s golden rule and Saha’s equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bim...

Metal-halide perovskite solar cells rival the best inorganic solar cells in power conversion efficiency, providing the outlook for efficient, cheap devices. In order for the technology to mature and approach the ideal Shockley-Queissier efficiency, experimental tools are needed to diagnose what processes limit performances, beyond simply measuring electrical characteristics often affected by pa...

TiO2 nanoparticles, as a photocatalyst for oxidation of dimethyl methylphosphonate (DMMP) as an organophosphorus simulant of chemical warfare agent, were prepared by using sol-gel method. The prepared nanoparticles were then modified with transition metals in order to decrease the electron-hole recombination and increase the photocatalytic activity. Transition metal ions including Pt...

We calculate the |Conduction, Heavy Hole (HH)〉 |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs(1−x)Bix alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9x9x9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band...

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...

The effects of an artificial cyclohexyl base pair on the quantum yields of fluorescence and dynamics of charge separation and charge recombination have been investigated for several synthetic DNA hairpins. The hairpins possess stilbenedicarboxamide, perylenediimide, or naphthalenediimide linkers and base-paired stems. In the absence of the artificial base pair hole injection into both adenine a...

We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well structure designed for 1.3 mm laser emission. The calculations are based on a 10310 k"p model, incorporating valence, conduction, and nitrogen-induced bands. The Auger transition matrix elements are calculated explicitly, without introducing any further approximations into the Hamiltonian used. We con...