نتایج جستجو برای: ideality factor

تعداد نتایج: 844497  

Journal: :Microelectronics Reliability 2011
Engin Arslan Serkan Bütün Yasemin Safak Habibe Uslu Ilke Tasçioglu Semsettin Altindal Ekmel Özbay

The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as the ideality factor (n), zero-bias barr...

2012
Saroj Bala

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...

2015
S. Chand

The current-voltage characteristics for Au/n-Si Schottky diode are generated by simulation. The simulation performed using Newton-Raphson iteration method yields current-voltage characteristics over wide temperature range. The data is analyzed using TDE-mechanism to study the temperature dependence of barrier height and ideality factor. Results obtained from simulation studies show the barrier ...

Journal: :Microelectronics Reliability 2015
Massimo Vanzi Giovanna Mura Giulia Marcello G. Martines

Journal: :Periodicals of Engineering and Natural Sciences (PEN) 2018

K. K. Chattopadhyay P. Datta P.K. Kalita Rh. Saikia,

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

Journal: :International Journal of Energy and Power Engineering 2023

The determination of the electrical conversion efficiency (ηC) is particularly important to evaluate performance a solar cell. For evaluation by considering ideal cell characterized an absence parasitic resistances and using characteristic equation which corresponds equivalent diagram, we determine parameters such as: saturation current density (J0), short-circuit (Js...

2011
E.M.G. Rodrigues R. Melício J.P.S. Catalão

This paper focuses on single-diode photovoltaic cell models. Comprehensive simulation studies are carried out in order to adequately assess temperature dependence, solar radiation change, diode ideality factor and series resistance influence. A comparison between an ideal model single-diode solar cell and a model of single-diode solar cell with a series resistance is also presented. Finally, co...

2015
S. Saraiva R. Melício

This paper focuses on the comprehensive modeling, simulation and experimental validation for a photovoltaic system formed by monocrystalline solar modules. The performance of the equivalent circuit model for a solar cell is validated by data measured parameters of photovoltaic modules. Also, this paper brings a novel iterative procedure to find the value of diode ideality factor, series and equ...

Journal: :Optics express 2007
Tal Carmon Steven Y T Wang Eric P Ostby Kerry J Vahala

A robust wide band (850 nm) fiber coupler to a whispering-gallery cavity with ultra-high quality factor is experimentally demonstrated. The device trades off ideality for broad-band, efficient input coupling. Output coupling efficiency can remain high enough for practical applications wherein pumping and power extraction must occur over very broad wavelength spans.

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