Crystals of niobium and its alloys obtained by low-energy implantation molybdenum zirconium ions were studied in a multi-functional installation. The energy distribution curves N (E) photoelectrons before after heating – studied. contribution surface zones formed atoms to photoelectron emission the photon region 8–10 eV was analyzed.

Electrical properties of semiconductor materials are greatly influenced by point defects such as vacancies and interstitials. These defects are common and form during the growth and processing of the material. Positron annihilation spectroscopy is a method suitable for detecting and studying vacancy-type lattice defects. In this work, the formation, properties, and annealing of vacancy defects ...

Ultralow-energy (ULE) ion implantation is increasingly being explored as a method to substitutionally dope graphene. However, complex implantation-related effects such defect creation and surface contamination, how they can be minimized by thermal annealing, remain poorly understood. Here, we address these open questions taking the model case epitaxial graphene grown on Cu(111), which was subse...

The key feature of semiconductors, that makes them so successful in modern electronic devices, is the possibility to alter their conductivity several orders of magnitude by introducing small quantities of dopant atoms. Ion implantation is the method of choice in state of the art semiconductor manufacturing to bring the dopants into the substrate material, mainly due to its ability to accurately...

Ion implantation is a promising technique for fabricating high density bit patterned media (BPM) as it may eliminate the requirement of disk planarization. However, there has not been any notable study on the impact of implantation on BPM fabrication of FePt, particularly at nano-scale, where the lateral straggle of implanted ions may become comparable to the feature size. In this work, implant...

5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...

Abstract The implantation of B atoms into BaSi 2 epitaxial films grown by molecular beam epitaxy was performed to form p-type films. It revealed Raman spectroscopy that the ion-implantation damage induced in implanted recovered post-annealing at 600 °C or higher temperatures for 64 min. hole concentration increased up 3.1 × 10 18 cm −3 room temperature, indicating B-ion-implanted p-BaSi are app...

Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers 10 μm thick epilayers by ion implantation various dosages of Al ions at room temperature (RT) and high (600 °C). The subsequent annealing process was conducted 1650 °C for minutes to activate the dopant atoms recover lattice damages introduced implantation. Synchrotron X-ray topography used characteri...

Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N(+) implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distr...