Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...

We study the optical transition between bound-to-continuum states in InGaAs/GaAs quantum well infrared photodetector (QWIP) by analyzing two possible boundary conditions for the continuum states. InGaAs/GaAs QWIP differs from the GaAs/AlGaAs QWIP in many aspects. Comparing running wave function and Bloch wave function with experimental results, we find that Bloch wave function is the much more ...

InAlAs/InGaAs Modulation-Doped Field-Effect Transistors (MODFETs) on InP have recently emerged as an optimum choice for a variety of microwave and photonics applications. This is because the outstanding transport properties of InGaAs have yielded devices with very low-noise and high-frequency characteristics. Unfortunately, the low breakdown voltage of InAlAs/InGaAs MODFETs on InP (typically le...

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation u...

We report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime...

Control over the location, distribution, and size of quantum dots is essential for the engineering of next-generation semiconductor devices employing these remarkable nanostructures. We describe two approaches for achieving some level of this control in the InGaAs/GaAs material system. The first allows a degree of spatial selectivity by using strain differences in patterned InGaAs thin films as...

The surface segregation of indium atoms during the growth of InGaAs/GaAs heterostructures has been investigated in situ by re ection high-energy electron di raction (RHEED). We pointed out that the strong damping of the RHEED oscillations during the deposition of InGaAs on GaAs was related to the segregation strength of indium atoms in the InGaAs layer. A simple model shows that the decay const...

InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector...

InGaAs-based Metal Semiconductor Metal (MSM) Photodetectors were fabricated and tested as photodetectors and Opto-electronic mixers. A comparison of various processing schemes for MSM InAlAs/InGaAs photodetectors on InP substrates was conducted to minimize the dark current. InAlAs Schottky Enhanced Layers (SEL) was employed on the InGaAs-based MSMs to enhance the barrier height to reduce the da...

As in Si CMOS, the incorporation of mechanical strain offers the possibility of improving the performance of III-V field effect transistors (FETs). Quantifying its potential and providing fundamental understanding of the impact of strain are the goals of this study. This paper reports an investigation of the impact of <110> uniaxial strain on n-type InAlAs/InGaAs HEMTs with a 70% InAs channel c...