نتایج جستجو برای: insulating layer

تعداد نتایج: 289916  

2014
Yonhua Tzeng Shoupu Yeh Wei Cheng Fang Yuehchieh Chu

Nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) and multi-layer-graphene-like hybrid carbon films have been synthesized by microwave plasma enhanced chemical vapor deposition (MPECVD) on oxidized silicon which is pre-seeded with diamond nanoparticles. MPECVD of N-UNCD on nanodiamond seeds produces a base layer, from which carbon structures nucleate and grow perpendicularly to form s...

2006
H. Takayanagi K. Itagaki

Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that socalled current compression is more pronounced w...

2011
Yujuan Zhao Robert Rennaker Chris Hutchens Tamer S. Ibrahim

─ Due to the limited size of antenna and electromagnetic loss of human head tissue, implantable miniaturized antennas suffer low radiation efficiency. This work presents simulation and analysis of implantable antennas for a wireless RF-powered brain machine interface applications. The accuracy and stability of antenna input impedance simulation are presented. The effects of the implanted antenn...

2004
J. Sébilleau

During a six months internship, the structuring of electrical vias by direct dewetting on gold substrates patterned with microcontact printing has been explored. A high modulus polymer has been tested to avoid roof collapse during the printing of the contact holes. The dewetting behaviour of potential candidates for the dielectric layer has been investigated. Conclusions: 1. Printing of the con...

Journal: :Science and Technology of Advanced Materials 2003

1996
M. A. A. M. van Wijck M. A. J. Verhoeven E. M. C. M. Reuvekamp G. J. Gerritsma D. H. A. Blank H. Rogalla

We present a study of the electrical properties of insulating CeO2 layers in combination with superconducting ~Y/Dy! Ba2Cu3O72d ~RBCO! films over ramps and in crossover structures. CeO2 is frequently used as a buffer layer, or template layer for biepitaxial grain boundary junctions, but can also be used as an insulating layer in ramp-type junctions and other multilayer structures. Epitaxial thi...

Journal: :Physical review letters 2013
F Amet J R Williams K Watanabe T Taniguchi D Goldhaber-Gordon

The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene on boron nitride is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. A...

2004
Jill S. Becker Esther Kim Roy G. Gordon

Highly uniform, smooth, and conformal coatings of higher nitrides of hafnium and zirconium were produced by atomic layer deposition from homoleptic tetrakis(dialkylamido)metal(IV) complexes and ammonia at low substrate temperatures (150-250 °C). The precursor vapors were alternately pulsed into a heated reactor, yielding 1.15-1.20 Å of metal nitride film for every cycle. Successful depositions ...

2003
J. Lambert G. de Loubens T. Mélin C. Guthmann M. Saint - Jean

– We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e. t = 1 ∼ 1000 s), the transport of electrons is mediated by traps in the oxide....

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