نتایج جستجو برای: interdiffusion
تعداد نتایج: 860 فیلتر نتایج به سال:
MAP DE87 006975 Repository-oriented leaching experiments involving Savannah River Laboratory (SRL) 165 type glass under a 7-radiation field (1 * 0.2 x 104 R/h) have been performed by the Nevada Nuclear Waste Storage Investigations (NNWSI) project. In this communication, we discuss glass surface analyses obtained by SEM, nuclear resonance profiling, and SIMS together with leachate solution data ...
We have performed magnetotransport, magnetization, and structural experiments on sputtered Fe~30 Å!/Cr~12 Å! ~110! superlattices that were annealed at temperatures up to 400 °C. Interestingly, their giant magnetoresistance (Dr) is enhanced at intermediate temperatures, and strongly decreased at higher temperatures. If normalized to the antiferromagnetic coupling fraction of sample, the magnetor...
Despite its tremendous importance for the understanding of underlying mechanisms and for the input in modeling and simulation of processes alike, accurate experimental diffusion data in liquid metals and alloys are rare. Common techniques exhibit several drawbacks that in most cases prevent an accurate measurement of diffusion coefficients convective contributions during diffusion annealing are...
As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge interdiffusion during thermal processing. Two different aspects of Si-Ge interdiffusion are explored in this ...
Ab initio calculations, based on norm-conserving pseudopotentials and density functional theory, have been performed to investigate the displacive Sb adsorption on the Si(0 0 1) surface with the (2 1) reconstruction. For the onemonolayer coverage of Sb, even though the formation of a pure Sb–Sb dimer is energetically more favorable than the interdiffusion of Sb into any of the second and third ...
Related Articles Kinetics of interdiffusion in semiconductor ternary quantum dots Appl. Phys. Lett. 101, 141906 (2012) Thermally induced interface chemistry in Mo/B4C/Si/B4C multilayered films J. Appl. Phys. 112, 054317 (2012) Probing the buried C60/Au(111) interface with atoms J. Chem. Phys. 136, 214706 (2012) Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdif...
Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo KLMC simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping mechanisms, and the stress dependence of transition rates obtained from density functional theory calculation results. Vacancy-mediated interdi...
The operational parameters of the automated Spray-LbL technique for thin film deposition have been investigated in order to-identify their effects on film thickness and roughness. We use the automated Spray-LbL system developed at MIT by the Hammond lab to build 25 bilayer films of poly (ally amine hydrochloride) (PAH) and poly (acrylic acid) (PAA). Each of the 10 operational parameters of this...
Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures D.B. Aubertine, N. Ozguven, and P.C. McIntyre Department of Materials Science and Engineering Stanford University, Stanford, CA S. Brennan Stanford Synchrotron Radiation Laboratory Stanford Linear Accelerator Center, Stanford, CA We investigate numerical simulations that utilize a non-linear interdiffusion so...
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