نتایج جستجو برای: ion beam sputtering

تعداد نتایج: 313044  

2010
A. G. Remnev K. Uemura K. V. Shalnov V. R. Kukhta R. Purwadi T. Ochi

The technology for medical needle deburring and sharpening in mass-scale production was developed. The technology is based on the combined application of the high current microsecond electron beam irradiation and the ion sputtering in the low pressure glow discharge plasma with hollow cathode. As a result of the electron beam irradiation deburring and surface smoothening occur. Shape modificati...

2001
David D. Cohen Roger Bird Nick Dytlewski Rainer Siegele

Blocking: Reduction of detector signal rate when aligned with a crystal axis or plane. Channeling: Guided trajectory of incident ions between crystal axes or planes. Collision cascade: Series of atom-atom collisions initiated by an ion-atom collision. Cross section: Effective area presented by each atom or nucleus for a specific type of interaction with an incoming ion. lmplantation: Addition o...

2007
Oliver Wilhelmi Steve Reyntjens Debbie J Stokes Laurent Roussel

Techniques for characterization and methods for fabrication at the nano-scale are becoming more powerful, giving new insights into the spatial relationships between nanostructures and greater control over their development. A case in point is the application of state-of-the-art focused ion beam technology (FIB), in combination with high-performance scanning electron microscopy (SEM), giving the...

2007
X. Li Xihua Li Anatoli Murauski Vladimir Chigrinov E. Khokhlov

The uniform alignment of Ferroelectric LCs (FLC) on inorganic thin film surfaces can be obtained using oblique ion beam sputtering deposition on substrates. Large deposition angle from 60o to 80 o can be used for thin SiO2 alignment layer, which thickness can vary from 5nm to 40 nm. Two types of uniform alignment of “chevron” (before electrical treatment) and “quazibookshelf” (after electrical ...

Alireza Hojabri Fatemeh Hajakbari Majid Mojtahedzadeh Larijani

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

Journal: :Journal of applied physics 2006
Qun Cai Brad Ledden Eric Krueger Jene A Golovchenko Jiali Li

We demonstrate that 3 keV ion beams, formed from the common noble gasses, He, Ne, Ar, Kr, and Xe, can controllably "sculpt" nanometer scale pores in silicon nitride films. Single nanometer control of structural dimensions in nanopores can be achieved with all ion species despite a very wide range of sputtering yields and surface energy depositions. Heavy ions shrink pores more efficiently and m...

2007
Robert D. Kolasinski James E. Polk Dan Goebel Lee K. Johnson

Low energy sputtering yields at grazing incidence have been investigated experimentally using a quartz crystal microbalance QCM technique. This method involved precoating the QCM with a thin film of the desired target material and relating the resonance frequency shift directly to mass loss during ion bombardment. A highly focused, low divergence ion beam provided a well defined incidence angle...

Journal: :Nanotechnology 2010
Sven Macko Frank Frost Bashkim Ziberi Daniel F Förster Thomas Michely

We present ion beam erosion experiments performed in ultrahigh vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles theta < or = 45 degrees with respect to the global surface normal using 2 keV Kr+ and fluences of approximately 2 x 10(22) ions m(-2). In fact, the ion beam...

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