نتایج جستجو برای: la2o3
تعداد نتایج: 425 فیلتر نتایج به سال:
The standard Gibbs energy of formation of LaMnO3 has been measured in the temperature range from 900 to 1400 K using a solid-state cell incorporating a buffer electrode. The oxygen potential corresponding to the three-phase mixture MnO 1 La2O3 1 LaMnO3 has been measured using pure oxygen gas at 0.1 MPa as the reference electrode, and yttria-stabilized zirconia as the solid electrolyte. The buff...
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300 ◦C – 600 ◦C) and ambient (N2 or O2). High effective mobility of 312 cm2/Vs and low interface-state density of 6 × 1010 cm−2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) o...
Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...
Latest trends in dental restorative ceramics involve the development of full-contour 3Y-TZP ceramics which can avoid chipping of veneering porcelains. Among the challenges are the low translucency and the hydrothermal stability of 3Y-TZP ceramics. In this work, different trivalent oxides (Al2O3, Sc2O3, Nd2O3 and La2O3) were selected to dope 3Y-TZP ceramics. Results show that dopant segregation ...
در این تحقیق، تأثیر نوع و میزان افزودنی بر روی رفتار تفجوشی و خواص سرامیک نیمه شفاف پایه آلومینا مورد بررسی قرار گرفت. برای این منظور، نانو پودر α-Al2O3 با مقادیر مختلفی از افزودنیهای MgO و La2O3 تحت فشارMPa 300 فشرده شده و در دو دمای 1700 و C°1875 تفجوشی گردید. ریزساختار نمونههای تفجوشی شده توسط میکروسکوپ نوری و میکروسکوپ الکترونی روبشی مجهز به EDS مورد بررسی قرار گرفت. نتایج نشان داد که...
A SnO2 nanocrystallite-based photoanode was prepared using tin (iv) chloride and fructose via a one-pot hydrothermal method, and its structural and morphological properties were studied. Structural observations revealed tetragonal crystals of SnO2, and morphological studies confirmed the presence of spherical nanoparticulates. Furthermore, encapsulating the surface of the SnO2 photoanode (+N719...
Polymer solid electrolytes (SEs) with high safety and flexibility are ideal for advanced lithium-metal solid-state batteries (SSBs). Among various polymer SEs, polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) SEs have gained increased attention their dielectric constants, ionic conductivity, excellent flexibility. However, severe side reactions at the interface caused by decomposition ...
In the present paper, effect of La2O3 (0.25, 0.5 and 1 wt.%) addition on phase stability, porosity, density, hardness, fracture toughness, compressive strength brittleness index hydroxyapatite modified with wt.% MgO was investigated. Hydroxyapatite (HA) without additives sintered at 1300?C has mixture dominant beta-tricalcium phosphate (?-TCP), alpha-tricalcium (?-TCP) calcium oxide (CaO) phase...
Rhodium on a La-containing ZrO2 support effectively eliminated NOx from a synthetic auto exhaust gas under fluctuating oxygen conditions. Rhodium particles maintained a low oxidation state on the ZrO2-La2O3 mixed oxide even after treatment with 5% O2 at 773 K, highlighting the significant effect of the La addition.
To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potent...
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