نتایج جستجو برای: la2o3 co3o4 zro2
تعداد نتایج: 4886 فیلتر نتایج به سال:
Ternary Cu/ZnO/metal oxide catalysts are prepared through the co-precipitation method under strict control of parameters like pH, calcination conditions, and precipitation temperature in a systematic manner. The metal oxides applied in this study consist of Al2O3, ZrO2, La2O3 and Ce2O3. The distinction of this work in comparison with similar research is a comprehensive investigatation of the ca...
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickn...
HIGH-FREQUENCY ELECTROMAGNETIC PROPERTIES OF BOROSILICATE GLASSESWITH ADDITIVES OF La2O3, TiO2, ZrO2
The results of studies high-frequency electromagnetic properties alkaline borosilicate glasses modified with lanthanum, titanium, and zirconium oxides concerning their structure are presented. values the spectral reflection transmission coefficients experimentally measured in frequency range 12–18 GHz. article presents typical spectra complex dielectric constant studied glass samples inthe 20 H...
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the int...
The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...
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