of photodiode and transimpedance amplifier on a 12.4 Moisture Sensitivity and Soldering. narrowly-focused beam falling only on the photodiode provides improved settling times from allanalog circuits to data conversion base circuits. Q1 and Q2 form a "cascode" amplifier circuit. To compensate for the high-frequency rolloff of the photodiode, U1B is configured as Daylight modifications will drama...

Abstract We propose and demonstrate a novel surface-grating vertical cavity surface emitting laser (VCSEL)-integrated amplifier/beam scanner. When the of VCSEL section is periodically etched, single slow-light mode which travels laterally into amplifier selected due to wavelength selectivity grating. The coupled slow light can be amplified with pumping above threshold. far field angle continuou...

A novel technique for a self-equalized distributed amplifier is presented by showing the analogy between transversal filters and distributed amplifier topologies. The appropriate delay and gain coefficients of amplifier circuit are obtained by a Fourier expansion of the raised cosine spectrum in the frequency range of 0-40GHz.

Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called “silicon photonics.” In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission ...

In this paper a new method for the design of a linear phase distributed amplifier in 180nm CMOS technology is presented. The method is based on analogy between transversal filters and distributed amplifiers topologies. In the proposed method the linearity of the phase at frequency range of 0-50 GHz is obtained by using proper weighting factors for each gain stage in cascaded amplifier topology....

the graphical technique for nonlinear circuits was described that enable us to optimize circuits to obtain maximum output power, maximum efficiency or minimum intermodulation. according to this method a high power amplifier in the ka band was designed. using a nonlinear model of the transistor, optimum slope for load-line was determined so that maximum power at the output was obtainable, then ...