This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is imple...

Received Sep 19, 2017 Revised Dec 30, 2017 Accepted Jan 17, 2018 This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being ...

A 1.8 GHz low-noise amplifier has been designed and fabricated in a standard 0.35 pm CMOS process. Measurement results indicate that the amplifier has a forward gain (S21) of 10.5 dB and a noise figure of 3.94 dB, while consuming 40 mW from a 2.5 V supply.

A low-noise CMOS amplifier operating at a low supply voltage is developed using the two noise reduction techniques of autozeroing and chopper stabilization. The proposed amplifier utilizes a feedback with virtual grounded input-switches and a multiple-output switched opamp. The low-noise amplifier fabricated in a 0.18-μm CMOS technology achieved 50-nV/ √ Hz input noise at 1-MHz chopping and 0.5...

This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...

— A low power wideband noise amplifier (LNA) for 1GHz to 10GHz wireless has presented for wireless application in this dissertation work. Low power wideband noise amplifier is design by using resistive shunt feedback, current reuse, gain flatting techniques, and inductive feedback technique. The high mobility electron transistors are used to improve the Noise Figure (NF) and scattering paramete...

A low-noise CMOS amplifier operating at a 1-V supply voltage is developed using the two noise reduction techniques of autozeroing and chopper stabilization. The proposed amplifier utilizes a feedback with virtual grounded input-switches and a multiple-output switched op-amp. The low-noise amplifier fabricated by a 0.18-μm CMOS technology was measured at a 1-V power supply, and achieved low nois...

In this paper, a new image-reject low noise amplifier is designed for the 2.4 GHz industrial-scientific-medical (ISM) band. An inter-stage T-structure filter is used in the low noise amplifier design to provide 35-dB image rejection. The goal of this design is to merge the image-reject function into the low noise amplifier.