نتایج جستجو برای: low noise trans conductance amplifier

تعداد نتایج: 1462961  

2016
Bhavna Prajapati Swapnil Jain Braj Bihari Soni K. W. Kobayashi Wei-Hong Hsu Yi-Jan Emery Chen Chun-Chieh Huang Xiaohua Yu

Recently, Low noise amplifier versatile used in modern wireless communication like Wi-Max, WLAN, GSM, Bluetooth and satellite communication. Low Noise amplifier have important feature like amplify the signal with rejection of noise. Low noise amplifier in modern communication used as filter with amplifier. In recent scenario low noise amplifier available in wide band, single band, multi-band fr...

Journal: :Silicon 2021

The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved performance and simpler fabrication than their inversion mode counterparts. This paper demonstrates design of different analog digital using DGJLT. Amplifiers inverters are basic building block electronic ICs. A MOS amplifier converts variation to so...

Journal: :Biophysical journal 2000
K Debus M Lindau

We investigated the noise levels in cell-attached patch capacitance recordings with a lock-in amplifier. The capacitance noise level decreases with increasing sine wave frequency up to 20-40 kHz. With a 20-mV rms sine wave the rms noise level above 8 kHz is <50 aF. With increasing sine wave amplitudes a further reduction down to 14 aF could be achieved. Capacitance measurements with a lock-in a...

Majid Shakibmehr Mojtaba Lotfizad

In this paper, an ultra-low-noise amplifier with frequency band switching capability is designed, simulated and fabricated. The two frequency ranges of this amplifier consist of the 2.4 to 2.5 GHz and 3.1 GHz to 3.15 GHz frequency bands. The designed amplifier has a noise figure of less than 1dB, a minimum gain of 23 dB and a VSWR of less than 2 in the whole frequency band. The design process s...

Journal: :IEEE Journal of Solid-State Circuits 1994

Journal: :IEEE Transactions on Circuits and Systems I: Regular Papers 2011

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...

Journal: :International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering 2015

Journal: :International Journal of Science and Engineering Applications 2017

Journal: :Journal of Research of the National Bureau of Standards 1987

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