this paper proposes a flexible power electronic transformer (fpet) for the application in the micro-grids. the low frequency transformer is usually used at the point of common coupling (pcc) to connect the low voltage grid and utility network to each other. the conventional 50hz transformer results in enhanced low voltage-grid power management system during grid-connected operation. in this pap...

a high accurate and low-voltage analog cmos current divider which operates with a single power supply voltage is designed in 0.18µm cmos standard technology. the proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. the proposed divider is modeled with neural network while tlbo algorithm is used to optimize it. the proposed optimization...

In this paper, a modified auto zeroed integrator is used to design and simulate a low-voltage high-Q switched capacitor pseudo 2-path filter.  The filter is a sixth–order Chebyshev band-pass filter operating at sampling frequency of 1MHz and center frequency of 250 kHz with a quality factor of 50. The proposed filter has both low-voltage and high speed properties of the auto zeroed integrators ...

a novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm cmos technology. a resistive-capacitive feedback is used to extend the bandwidth of the amplifier. as the structure is inductor less, it is suitable for low cost integrated optical interconnects. in this paper improved particle swarm optimization have applied to determine optimal trans-resistance and noise of propose...

the fabrication of a non-doped red organic light-emitting device (oled) has been developed using naturally occurring curcumin as an emissive layer of oled. in this research, the electroluminescent spectrum (el) of curcumin as a donor-acceptor-donor (d-a-d) chromophore was obtained at wavelength of 612 nm. also, the maximum external quantum efficiencies (eqe) for this device was measured and fou...

This paper presents a new nonv design that incorporates low-voltag PMOS Flash transistors. The de global store, restore and erase o negligible penalty on regular SRA Store/erase operations also do not c power even considering charge Circuit simulations based on exp characteristics demonstrate that 10 operation at ± 6 V is sufficien restoration of the stored bit even und process variation.