This paper reports a new method for making multi-layer substrates (h4LS) for high aspect ratio single crystalline movable microstructures using a group of technologies, such as direct wafer bonding (DWJ3) , chemical mechanical polishing (CMP) , and reactive ion etching (RIE) . As a first example, Si-SiO,-polySi-SiO,-Si sandwich wafers were fabricated using CMP and DWB. Subsequently, free-standi...

This paper reports a new method for making high aspect ratio Single Crystalline Silicon (SCS) microstructures om multi layer substrates using Chemical Mechanical Polishing (CMP), Silicon Fusion Bonding (SFB) and Reactive Ion Etching (NE) techniques. First Si-Si02-PolySi-Si02-Si sandwich wafers were fabricated using CMP and SFB. Then microstructures were fabricated on these sandwich wafers using...

Silicon nitride is a well-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nit...

In such processes as wafer-grinding and LPCVD, the variation within a group of measurements is traceable to various causes, and therefore, needs to be decomposed into relevant components of variation for an effective equipment monitoring and diagnosis. In this article, an LPCVD process is considered as an example, and control charting methods are developed for monitoring various fixed and rando...

This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride propert...

The organozinc fluorocarboxylates RZnO2CRf and RZnO2CRf·TMEDA, along with Zn(O2CRf)2·TMEDA (R = Me, Et; Rf = C2F5, C3F7) have been synthesized. The structures of EtZnO2C2F5 (5), EtZnO2C3F7 (7), EtZnO2C2F5·TMEDA (11), Zn(O2C2F5)2·TMEDA (13), along with products from the adventitious reaction with either O2 or H2O, Zn10Me4(OMe)4(O2CC2F5)12 (2), Zn9Et2(O2CC2F5)12(O)2 (6), Zn8Et4(OEt)4(O2CC3F7)6(O)...

A study on the impact of different growth and deposition techniques reliability silicon dioxide (SiO 2 ) layers carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) is presented compared to channel mobilities that were extracted from lateral field-effect transistors (LMOSFETs). Oxide formed using atomic layer (ALD), low pressure chemical vapour (LPCVD) direct thermal growth, including p...

This paper is presented to give an overall view of pressure sensors in the previous two decades. The evolution of sensor technologies, different MEMS pressure sensors, their merits and demerits are discussed. Keywords— Fabry Perot Interferometer (F-P), Pressure Sensors, Electromagnetic Interference (EMI), Low pressure chemical vapour deposition (LPCVD).

The fabrication of high efficiency (9-10%) microcrystalline silicon (μc-Si:H) p-i-n solar cells on glass has been so far reported mostly for cells deposited on sputtered and etched zinc oxide (ZnO). In this paper, we describe the preparation of μc-Si:H devices with efficiencies close to 10%, using glass coated with ZnO deposited by low pressure chemical vapor deposition (LPCVD). These results a...