The properties of ceramic materials are strongly influenced by the presence of ultradilute impurities (dopants). Near-edge X-ray absorption fine structure (NEXAFS) measurements using third-generation synchotron sources can be used to identify ultradilute dopants, provided that a good theoretical tool is available to interpret the spectra. Here, we use NEXAFS analysis and first-principles calcul...

Alkylsulfonates are examined as anion dopants for the matrix-assisted laser desorption/ionization-mass spectrometry (MALDI-MS) of neutral oligosaccharides. The anion dopants allow neutral oligosaccharides to be examined in the same mixture as acidic oligosaccharides. The alkylsulfonate dopants interact strongly with the oligosaccharide to produce a quasimolecular ion composed of the oligosaccha...

Recent low-temperature scanning tunnelling spectroscopy experiments on the surface of Bi2Sr2CaCu2O8+x have revealed a strong positive correlation between the position of localized resonances at 960 meV identified with interstitial oxygen dopants and the size of the local spectral gap. We review efforts to understand these correlations within a model where the dopants modulate the pair interacti...

The effects of carbon doping on structural and electronic properties of amorphous Ge2Sb2Te5 are studied by using ab initio molecular dynamics simulations. In comparison with Si, N, and O dopants, C dopants are found to fundamentally alter the local order of amorphous network by increasing the population of tetrahedral Ge atoms significantly. In addition, the density of ABAB-type squared rings i...

The local structure of a Zn, Sn codoped In2O3 thin film grown on ĉ-plane sapphire by pulsed-laser deposition was examined by polarization-dependent x-ray absorption spectroscopy. The bixbyite film structure is both out-of-plane and in-plane oriented, and the structural results show that both Zn and Sn dopants occupy In sites. The In–O bond length is comparable to that in powder In2O3. However, ...

We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per...

In this paper, undoped TiO2 and Ag-Nd-codoped TiO2 nanocomposites with different molar ratios of dopants were synthesized by the sol-gel method using starch as a natural additive. Structures were investigated by FT-IR and UV–Vis spectroscopy, SEM, and XRD methods. Moreover, the direct band gap was calculated by Tauc's approach. Furthermore, photocatalytic activity of all s...

We study the trapping kinetics of oxide traps and the subsequent degradation in p-channel MOSFET under bias temperature stress and in presence of random discrete dopants. Using our simulator Minimos-NT we self-consistently undertake time-dependent simulations of defect creation employing our multistate non-radiative multi phonon model. We find that random discrete dopants shift and broaden the ...

David Andersson et al. report calculations revealing how doped oxides with cubic fluorite structures become effective ionic conductors. Cubic fluorite structures, such as ceria (CeO2), can become effective ionic conductors when doped with cations of lesser valence than the host cations. Doped ceria thus has potential as an electrolyte for environmentally friendly solid oxide fuel cells. Anderss...

The key feature of semiconductors, that makes them so successful in modern electronic devices, is the possibility to alter their conductivity several orders of magnitude by introducing small quantities of dopant atoms. Ion implantation is the method of choice in state of the art semiconductor manufacturing to bring the dopants into the substrate material, mainly due to its ability to accurately...