نتایج جستجو برای: magnetoresistance
تعداد نتایج: 5071 فیلتر نتایج به سال:
Model for a macroscopically disordered conductor with an exactly linear high-field magnetoresistance
We calculate the effective resistivity of a macroscopically disordered two-dimensional conductor consisting of two components in a perpendicular magnetic field. When the two components have equal area fractions, we use a duality theorem to show that the magnetoresistance is nonsaturating and at high fields varies exactly linearly with the magnetic field. At other compositions, an effective-medi...
We have determined the magnetoresistance of RuO2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger fields. The magnitude of the negative magnetoresistance increases rapidly as the temperature is lowered, while that of the positive magnetoresistance has smaller ...
We show magnetoresistance in excess of 1000% in trilayers containing highly spin-polarized La0.7Ca0.3MnO3 and high-Tc superconducting YBa2Cu3O7. This large magnetoresistance is reminiscent of the giant magnetoresistance (GMR) in metallic superlattices but with much larger values, and originates at spin imbalance due to the injection of spin-polarized carriers. Furthermore, in contrast to ordina...
Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest Idc. A two-term Drude model succes...
We report a large positive magnetoresistance ratio in insulating organic crystals theta-(ET)(2)CsZn(SCN)(4) at low temperatures at which they exhibit highly nonlinear current-voltage characteristics. Despite the nonlinearity, the magnetoresistance ratio is independent of the applied voltage. The magnetoresistance ratio depends little on the magnetic field direction and is described by a simple ...
The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/ MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetor...
The recent discovery of large magnetoresistance in tungsten ditelluride provides a unique playground to find new phenomena and significant perspective for potential applications. The large magnetoresistance effect originates from a perfect balance of hole and electron carriers, which is sensitive to external pressure. Here we report the suppression of the large magnetoresistance and emergence o...
The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investi...
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