Realization of a novel single-resistance-controlled oscillator, employing an active element and all grounded passive elements, is the purpose of this manuscript. With requirements for completing the design being only a single Voltage Differencing Current Conveyor and four grounded passive components, it is also a preferable choice for integrated circuit implementation. The designed circuit has ...

We present two cryogenic Application Specific Integrated circuits (ASIC's) realized with a GaAs MESFET process. A single-channel differential or double-channel singleended voltage sensitive preamplifier for 4.2 K operation, to be used with bolometric detectors, was realized and tested. A very simple structure working as a unity gain buffer or as a transconductance amplifier, or even as a shapin...

A fully integrated GaAs MESFET active inductor is presented in this paper with independent voltage tunable inductance and series-loss resistance. The measured inductance is tunable from 65 to 110 nH in the frequency range from 100 MHz to 1.0 GHz. The measured loss resistance is independently tunable over a 5.6to+20.8range corresponding to a 0.26 and 0.65 V change in dc tuning voltages, respecti...

Finite Element Time Domain Method is used to determine the intrinsic elements of a broadband small-signal equivalent circuit (SSEC) of FET’s. The values of the differents elements are calculated from the Y parameters of the intrinsic MESFET, which are obtained from the Fourier analysis of the device transient reponse to voltage-step perturbations at the drain and gate electrodes. The success of...

A simplified version of a RlSC microprocessor has been implemented with E/D MESFET DCFL in the Vitesse HGaAs II process. This chip was designed to drive the development of digital GaAs design automation tools. The processor architecture was modified to fit DCFL technology. The 60,500-transistor circuit executes a set of 29 basic instructions. It dissipates 11 W and operates at over 100 MHz. The...

The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models. The proposed technique exploits efficient intermediate mathematical models to perform the link between physics-based analysis and circuit-oriented simulations, and only requires ...

Coupled electro-thermal simulations are performed to demonstrate predictive design of microwave devices. These simulations are based on an original, fully physical, thermal impedance matrix approach, capable of describing 'nearly exactly' time-dependent heat flow in complex 3-dimensional systems, whilst requiring no model reduction for electro-thermal CAD. This thermal model is validated by the...