نتایج جستجو برای: metal contact

تعداد نتایج: 354205  

Journal: :Physical review letters 2010
Hojin Kim Alejandro Strachan

Using molecular dynamics we find that the tensile strength of the contacts between two clean platinum surfaces with nanoscale asperities is strongly size dependent with a maximum strength for contact lengths of approximately 5 nm. This is the first time a strongest size is observed in single crystals. The strengthening with decreasing size down to 5 nm results from a decrease in the initial den...

Journal: :Environmental Health 2003
Charlotte D Jensen Klaus E Andersen

BACKGROUND Metal-working fluids contain complex mixtures of chemicals and metal workers constitute a potential risk group for the development of allergic contact dermatitis. CASE PRESENTATION Two metal workers developed allergic contact dermatitis on the hands and lower arms from exposure to a neat oil used in metal processing. Patch testing revealed that the relevant contact allergen was a c...

2013
Wenjun Liu Jun Wei Xiaowei Sun Hongyu Yu

The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.

Journal: :ACS nano 2016
Khoong Hong Khoo Wei Sun Leong John T L Thong Su Ying Quek

Edge contact geometries are thought to yield ultralow contact resistances in most nonferromagnetic metal-graphene interfaces, owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus surface-contacted ferromagnetic metal-graphene interfaces (i.e., nickel- and cobalt-graphene interfaces) using both single-layer and few-layer graphene. Good q...

2015
Jose G. Martinez Beatriz Berrueco Toribio F. Otero

Most of the literature accepts, despite many controversial results, that during oxidation/reduction films of conducting polymers (CPs) move from electronic conductors to insulators. Thus, engineers and device's designers are forced to use metallic supports to reoxidize the material for reversible device work. Electrochromic front experiments appear as main visual support of the claimed insulati...

The present study was carried out to investigate the adsorption and leaching behavior of Cu2+, Zn2+ and Pb2+ by sediments collected from the western banks of three different sectors along River Nile at Aswan governorate, Egypt. The feasibility of sediments for the removal of Cu2+, Zn2+ and Pb2+ from aqueous solutions was tested under the effect of three conditions (pH, initial metal concentrati...

Journal: :Nano letters 2014
Cheng Gong Luigi Colombo Robert M Wallace Kyeongjae Cho

Density functional theory calculations are performed to unravel the nature of the contact between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present for a variety of metals with the work functions spanning over 4.2-6.1 eV. Except for the p-type Schottky contact with platinum, the Fermi levels in all of the studied metal-MoS2 complexes are situated above the midgap of...

1997
Madhu Menon Deepak Srivastava

Stable “T junctions” of single-walled carbon nanotubes forming one of the smallest prototypes of microscopic metal-semiconductor-metal contacts are proposed. The structures have been found to be local minima of the total energy on relaxation with a generalized tight-binding molecular dynamics scheme. These quasi-2D junctions could be the building blocks of nanoscale tunnel junctions in a 2D net...

2015
Alon Vardi Wenjie Lu Xin Zhao Jesús A. del Alamo

A novel contact-first approach for III–V FinFETs and trigate MOSFETs is presented. In this process, the metal contact is sputtered on the as-grown semiconductor heterostructure, and the contact metal is used as a part of the fin dryetch mask. We demonstrate this technique in Mo/n+-InGaAs contact structures with fin widths in the range of 50 to 300 nm. We have measured contact resistance in the ...

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