AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with pattern alternating SiO2 mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles that demonstrated the distribution growth rate z in window experimentally studied. It was shown layer AlAs mole fraction increased continuously from center to ...

In this paper, we have focused on the formation and the role of CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS). CdTe was treated with CdCl2 : known to be a key processing parameter. Compositional analysis showed considerable interdiffusion of Te and S as w...

As a possible cavity quantum electrodynamical system, unlike III-V quantum dots, Si-NCs are not considered ideal emitters for emission rate enhancement observations (Purcell effect). Here, we report on direct measurements of spontaneous emission rate enhancement of Si-NCs embedded in a whispering-gallery mode resonator at room temperature. Using time-resolved microphotoluminescence experiments,...

We report on time-resolved microphotoluminescence experiments in a single GaAs/GaAlAs V-shaped quantum wire as a function of optical excitation intensity. At low pump power we observe that excitons are localized in quantum boxes formed by the local potential minima existing along the wire axis. As the pump power is increased, state filling of the lowest lying levels of the boxes appears. When t...

We report on the study of many-body interactions in a single high-quality V-shaped quantum wire by means of continuous and time-resolved microphotoluminescence. The transition from a weakly interacting exciton gas when the carrier density n is less than 10 cm ~i.e., naX,0.1, with aX the exciton Bohr radius! to a dense electron-hole plasma (n.10 cm, i.e., naX.1) is systematically followed in the...

We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well ~QW! structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 mm, were deposited sequentially by shadow ma...

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The authors combine acousto-optoelectric and multichannel photon correlation spectroscopy to probe spatiotemporal carrier dynamics induced by a piezoelectric surface acoustic wave (SAW). technique is implemented combining phase-locked optical microphotoluminescence simultaneous three-channel time-resolved detection. From the recorded time-correlated single-photon-counting data, time transients ...

We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens meV, allowing us to experimentally resolve up four well separated subband excitations microphotoluminescence spectroscopy. Our detailed experimental and theoretical polarization-resolved study reveals a strong diameter-d...