Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), ...

Grown by Molecular Beam Epitaxy Takashi SUEMASU, Motoki TAKAUJI, Cheng LI, Yoshinori OZAWA, Masao ICHIDA and Fumio HASEGAWA Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan Center for Tsukuba Advanced Research Alliance, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan Department of Physics, Konan University, Kobe, Hyo...

CdSe/ZnSe quantum structures grown on GaAs~001! by molecular-beam epitaxy were systematically investigated by high-resolution x-ray diffraction and high-resolution transmission-electron microscopy. Half of the initial Cd deposit redesorbs when migration-enhanced epitaxy is used instead of conventional molecular-beam epitaxy for the overgrowth of the CdSe by ZnSe. This result is explained by a s...

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The microstructure of nominally undoped epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped a-GaN films have an ordered point-defect structure. A model of this ...