During the development of a custom HBT MMIC, solutions will be evolved for the RF and DC circuits in parallel with the packaging and thermal design. The type of MMIC being developed will determine the relative difficulty these areas present. Following a brief introduction to HBT MMICs, this paper focuses on the issues associated with the design of the DC bias circuit, which need to be correctly...

This paper describes the Thermal and structural combined simulation on COMSOL Multiphysics of a Microwave (MW) Fin Taper (FT) Spatial Power Combiner (SPC) Power Amplifier (PA), based on rectangular Waveguide (WG). In the SPC based PA's, the captured power is feeded by microstrip transmission lines (μSTL’s) to Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifier (SSPA’s). T...

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB o...

This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate asymmetric recess, were ado...

This paper presents an overview of the terahertz (THz) resonant tunneling diode (RTD) technology that will be used as one of the approaches towards wireless data centres as envisioned on the EU H2020 TERAPOD project. We show an example 480 m × 680 m THz source chip at 300 GHz employing a 4 μm × 4 μm RTD device with 0.15 mW output power. We also show a basic laboratory wireless setup with this...

Abstract: The analysis of transversal filters based on a novel cell design in common-source configuration (TF-CS) is presented. Based on this approach, a distributed transversal filter was designed as a monolithic microwave integrated circuit (MMIC) for optical-CDMA receiver systems [1]. In order to assess its performance, a transversal filter based on Gilbert cells (TF-GC) was designed using t...

This work reports a multipurpose highly linear ultrawideband amplifier with gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic microwave integrated circuit (MMIC) process. A transimpedance is cascaded distributed amplifier, emulating receiver subsystem. Using diamond heat spreader, to dissipate from transistors, amplification subsystem can achieve very high output ...

The demonstration of a 75-305-GHz power amplifier (PA) monolithic microwave integrated circuit (MMIC) is presented in this letter. PA based on an eight-cell traveling-wave unit (UA). Each cell contains RF cascode with two two-finger transistors gate width 20 ?m each. In the output stage, balanced configuration combines UAs Lange couplers. front, third UA used as driver amplifier. MMIC fabricate...

We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated...

We describe a multioctave power-combiner structure using finline arrays in an oversized coaxial waveguide. The spectral-domain method (SDM) is used to compute the propagation constant in this structure, and is verified with HFSS simulations. The SDM method is then employed to synthesize broad-band tapered impedance transformers in finline for coupling energy to and from a set of monolithic micr...