A simply and facilely synthesized MoO3 solution was developed to fabricate charge injection layers for improving the charge-injection properties in p-type organic field-effect transistors (OFETs). By dissolving MoO3 powder in ammonium (NH3) solvent under air atmosphere, an intermediate ammonium molybdate ((NH4)2MoO4) precursor is made stable, transparent and to be spin-coated to form the MoO3 i...

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (M...

Ceramic hollow spheres of MoS2 and MoO3 were obtained by sonochemical synthesis of MoS2 and MoO3 templated on silica nanoparticles (diameters 50-500 nm) followed by acid etching to remove the silica core. The resulting hollow materials have been characterized by elemental analysis, XPS, SEM, TEM, optical absorption, and hydrodesulfurization (HDS) studies. The TEM studies on the hollow ceramic m...

We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces...

UNLABELLED A solution processed MoO3/PEDOT:PSS bilayer structure is used as the hole transporting layer to improve the efficiency and stability of planar heterojunction perovskite solar cells. Increased hole extraction efficiency and restrained erosion of ITO by PEDOT PSS are demonstrated in the optimized device due to the incorporation of an MoO3 layer.

The electrical properties of a device with an Al /Alq3/nanostructured MoO3 /Alq3 /p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq3 thin films. When th...

We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/ molybdenum trioxide (MoO3) (20 nm)/N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 nm)/ tris-(8-hydroxyquinoline) (Alq3) (70 nm)/Mg:Ag (200 nm) using an oblique angle deposition technique by which MoO3 was deposited at oblique angles (θ) with respect to the...

A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO3 (Diamond:H/MoO3) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond:H/H2O system. MOSFETs using HfO2 as gate insulator show excellent output characteristics and gate cont...

MoO3 thin films have been prepared by a simple spray pyrolysis technique at substrate temperature 250C. The structure and morphology of thin films are characterized by X-ray powder diffraction (XRD), scanning electron microscopy and UV-vis spectroscopy. The gas sensing properties of MoO3 thin film is studied at gas concentration 400 ppm and working temperature of 100–400 C. It was found that th...

Although TiO2 was formerly a common material for photocatalysis reactions, its wide band gap (3.2 eV) results in absorbing only ultraviolet light, which accounts for merely 4% of total sunlight. Modifying TiO2 has become a focus of photocatalysis reaction research, and combining two metal oxide semiconductors is the most common method in the photocatalytic enhancement process. When MoO3 and TiO...