The DRAM cells consist of one or several MOSFET devices and the subthreshold leakage current through the MOSFET strongly depends on the temperature variation. Therefore, it is obvious that the leakage of a memory cell is highly related to temperature variation. The temperature of the circuit can be measured indirectly by using leakage sensors which can be applied to various VLSI circuits becaus...

The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...

The switching waveforms of a series of power MOSFET devices called Logic Level FETs (L2FETs) and featuring a 5V gate drive are presented and contrasted with those of the more conventional 10V gate drive devices. A new method of characterizing MOSFET switching performance is discussed in which the MOSFET is treated as a vertical JFET driven in cascade from a low voltage lateral MOS. The 2:1 adva...

A low-side switch is a MOSFET or an IGBT that is connected to the ground-referenced and is not floating. In a boost converter, the source terminal of the MOSFET is connected to the circuit ground, which is referred to a low-side MOSFET. To switch an N-channel MOSFET of a boost converter on, the V should be in the order of 10 to 20V. Since the source terminal is grounded, this implies that the g...

A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivit...

A novel asymmetric MOSFET with no LDD on the source side is simulated on bulk-Si using a device simulator (SILVACO). In order to overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using mesa structure and sidewall spacer gate is proposed which provides self-alignment process, aggressive scaling, and uniformity. First of all, we have simulated to compare the ...

Employment of the <100> channel direction in a strained-Si0.8Ge0.2 p-MOSFET provides a hole mobility enhancement as large as 25% and a parasitic resistance reduction of 20% compared to a <110> strained-Si0.8Ge0.2 channel p-MOSFET, which already has a better mobility and threshold voltage roll-off than the Si p-MOSFET. These results suggest that the <100> strained-SiGe-channel p-MOSFET can be us...

The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER software to expres...

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison wi...