A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated in short channel MOSFETs has made researchers revisit the problem to develop better models, especially in recent years. In this review, a detailed discussion of the most rec...

Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models -such as the MOSFET square law -for circuit design calculations. However, low-voltage, lowpower systems development demands more advanced circuit design techniques. In this paper I present a brief literature review of...

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKVformalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An i...

In this paper modeling framework for single gate conventional planar MOSFET and double gate (DG) MOSFETS are reviewed. MOS Modeling can be done by either analytical modeling or compact modeling. Single gate MOSFET technology has been the choice of mainstream digital circuits for VLSI as well as for other high frequency application in the low GHZ range. The major single gate MOS modeling methods...

| Inverse modeling is a promising approach to know device structures made in experiments. We show our inverse modeling approach and its e ciency by demonstrating accurate extraction of deep submicron MOSFET structures. We also show that our approach can predict device performance to optimize its structure for required speci cation.

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material wo...

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degra...

MOSFETs with heavily doped regions at one or both ends of the channel exhibit qualitative differences in electrical behavior compared to devices with laterally uniform channel doping. These differences include a distinct peakiness in the transconductance near threshold, asymmetries in capacitances, and a surprising decrease in the statistical variation of the peak gain factor as channel length ...

-The optimization of the input MOSFET for charge amplifiers in deep submicron technologies is discussed. After a review of the traditional approach, the impact of properly modeling the equivalent series noise and gate capacitance of the MOSFET is presented. It is shown that the minimum channel length and the maximum available power are not always the best choice in terms of resolution. Also, in...